A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a...
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| Veröffentlicht in: | Journal of semiconductors 2011-08, Vol.32 (8), p.118-121 |
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| container_end_page | 121 |
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| container_issue | 8 |
| container_start_page | 118 |
| container_title | Journal of semiconductors |
| container_volume | 32 |
| creator | 王洪来 张小兴 戴宇杰 吕英杰 Toshimasa Matsuoka Wang Jun Kenji Taniguchi |
| description | This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage. |
| doi_str_mv | 10.1088/1674-4926/32/8/085009 |
| format | Article |
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| ispartof | Journal of semiconductors, 2011-08, Vol.32 (8), p.118-121 |
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| language | eng |
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| source | Institute of Physics Journals; Alma/SFX Local Collection |
| subjects | CMOS CMOS工艺 Electric potential Inversions MOSFET MOSFETs Resistors Semiconductor devices Semiconductors Voltage 亚阈值 低功耗 低电压 双极晶体管 电压基准 电源电压 |
| title | A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs |
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