A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a...

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Veröffentlicht in:Journal of semiconductors 2011-08, Vol.32 (8), p.118-121
1. Verfasser: 王洪来 张小兴 戴宇杰 吕英杰 Toshimasa Matsuoka Wang Jun Kenji Taniguchi
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Sprache:eng
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Zusammenfassung:This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/8/085009