A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-S...

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Veröffentlicht in:	Journal of semiconductors 2011-04, Vol.32 (4), p.70-76
1. Verfasser:	李劲刘红侠袁博曹磊李斌
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Channels Depletion Gates Mathematical models MOSFET MOSFETs Semiconductors Two dimensional 二维分析全耗尽双栅应变硅料门解析模型非对称
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container_title	Journal of semiconductors
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creator	李劲刘红侠袁博曹磊李斌
description	On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.
doi_str_mv	10.1088/1674-4926/32/4/044005
format	Article
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source	IOP Publishing Journals; Alma/SFX Local Collection
subjects	Asymmetry Channels Depletion Gates Mathematical models MOSFET MOSFETs Semiconductors Two dimensional 二维分析全耗尽双栅应变硅料门解析模型非对称
title	A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs
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