Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application

Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application

A new optimization method of a source inductive degenerated low noise amplifier (LNA) with electrostatic discharge protection is proposed. It can achieve power-constrained simultaneous noise and input matching. An analysis of the input impedance and the noise parameters is also given. Based on the d...

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Veröffentlicht in:Journal of semiconductors 2011-10, Vol.32 (10), p.105004-1-10
Hauptverfasser: Li, Zhiqun (智群 李), Chen, Liang (亮陈), Zhang, Hao (浩张)
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Sprache:eng
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Amplifiers
CMOS
Direct current
Noise
Noise levels
Optimization
Power gain
Semiconductors
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container_issue 10
container_start_page 105004
container_title Journal of semiconductors
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creator Li, Zhiqun (智群 李)
Chen, Liang (亮陈)
Zhang, Hao (浩张)
description A new optimization method of a source inductive degenerated low noise amplifier (LNA) with electrostatic discharge protection is proposed. It can achieve power-constrained simultaneous noise and input matching. An analysis of the input impedance and the noise parameters is also given. Based on the developed method, a 2.4 GHz LNA for wireless sensor network application is designed and optimized using 0.18- mu m RF CMOS technology. The measured results show that the LNA achieves a noise figure of 1.59 dB, a power gain of 14.12 dB, an input 1 dB compression point of -8 dBm and an input third-order intercept point of 1 dBm. The DC current is 4 mA under a supply of 1.8 V.
doi_str_mv 10.1088/1674-4926/32/10/105004
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source IOP Publishing Journals; Alma/SFX Local Collection
subjects Amplifiers
CMOS
Direct current
Noise
Noise levels
Optimization
Power gain
Semiconductors
title Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application
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