Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on (100) orientation high resistivity (p 〉 500 Ω.cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thick...

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Veröffentlicht in:Journal of semiconductors 2013-03, Vol.34 (3), p.127-132
Hauptverfasser: Zhao, Xiaofeng, Wen, Dianzhong, Zhuang, Cuicui, Cao, Jingya, Wang, Zhiqiang
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Sprache:eng
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