Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K

Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated disloc...

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Veröffentlicht in:	Journal of materials science 2013-01, Vol.48 (1), p.115-124
Hauptverfasser:	Okuno, T., Saka, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystallography Crystallography and Scattering Methods Dislocations Electron microscopes EM in Industry Glide Materials Science Orientation Polymer Sciences Scratching Silicon Solid Mechanics
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