Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K
Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated disloc...
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| Veröffentlicht in: | Journal of materials science 2013-01, Vol.48 (1), p.115-124 |
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| container_title | Journal of materials science |
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| creator | Okuno, T. Saka, H. |
| description | Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. The mechanism responsible for the zigzagging of the shuffle set of dislocations was discussed. |
| doi_str_mv | 10.1007/s10853-012-6860-x |
| format | Article |
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The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. 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The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. The mechanism responsible for the zigzagging of the shuffle set of dislocations was discussed.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Crystallography</subject><subject>Crystallography and Scattering Methods</subject><subject>Dislocations</subject><subject>Electron microscopes</subject><subject>EM in Industry</subject><subject>Glide</subject><subject>Materials Science</subject><subject>Orientation</subject><subject>Polymer Sciences</subject><subject>Scratching</subject><subject>Silicon</subject><subject>Solid Mechanics</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kc-KFDEQhxtRcFx9AG8BL3rotfK_97gsqy4uCK6eQyapDL30JGOSxpm38Vl8MtOOsIwoORSkvl-R1Nd1LymcUwD9tlAYJO-Bsl4NCvr9o25Fpea9GIA_7lYAjPVMKPq0e1bKPQBIzeiqs9cTuppTJNvR5VRc2iEpdfYHkgLxY5mSs3VMsZAxNs7PDj1ZH4jHkPL2d6t1iCV3I1lj_Y4YidbERk8GzX_--Pi8exLsVPDFn3rWfX13_eXqQ3_76f3N1eVt7yRVtRdKywBUBU6pZVJbB0I4FNxxrxQLQa65BmvXLjAvg5JAtRVKXmi0VDHPz7rXx7m7nL7NWKrZjsXhNNmIaS6GCn6hJQXFGvrqL_Q-zTm21xkm2MCGhXygNnZCM8aQarZuGWouORcgGB0W6vwfVDse20ZTxDC2-5PAm5NAYyru68bOpZibu8-nLD2yi5qSMZhdHrc2HwwFs3g3R--meTeLd7NvGXbMlMbGDeaHz_0_9As3v60y</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Okuno, T.</creator><creator>Saka, H.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20130101</creationdate><title>Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K</title><author>Okuno, T. ; 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The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. The mechanism responsible for the zigzagging of the shuffle set of dislocations was discussed.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10853-012-6860-x</doi><tpages>10</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystallography Crystallography and Scattering Methods Dislocations Electron microscopes EM in Industry Glide Materials Science Orientation Polymer Sciences Scratching Silicon Solid Mechanics |
| title | Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K |
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