Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

Low‐temperature‐deposited (LT‐) AlN layers and the initial growth of GaN on a‐ and c‐sapphire have been investigated and compared. The as‐deposited LT‐AlN layers on both a‐ and c‐sapphire are composed of high‐density islands. By annealing, the islands become large. The density of islands on a‐ and c‐sapphire are 5.6 × 1010 and 7.9 × 1010 cm‐2, respectively, indicating that the evolution of the solid phase epitaxy of AlN islands induced by annealing is different on a‐ and c‐sapphire. The moiré spacings obtained by plan‐view electron microscopy reveal that the strain of the AlN islands on a‐sapphire is larger than that of islands on c‐sapphire. These results imply that development of the solid phase epitaxy is influenced by the strain. The coalescence of GaN islands grown on a‐sapphire, which has larger AlN islands, is advanced compared with that of islands on c‐sapphire. The relationship between the annealed AlN island density and the threading dislocation (TD) density in the GaN films is investigated on a‐ and c‐sapphire. The TD density of the GaN films is small when the density of annealed AlN islands is low. These results indicate that decreasing the island density of the annealed AlN layers is essential for improving the crystalline quality of GaN films. It is therefore important to control the solid phase epitaxy of LT‐AlN layers by annealing. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)