Write operation study of Co/BTO/LSMO ferroelectric tunnel junction

Recently, a Co/BaTiO3/La0.67Sr0.33MnO3 (Co/BTO/LSMO) ferroelectric tunnel junction (FTJ) has shown the great potential towards non-volatile memory and logic applications due to its excellent performance. Especially, the giant OFF/ON tunnel resistance ratio (e.g., ∼100) assures that FTJ-based random...

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Veröffentlicht in:	Journal of applied physics 2013-07, Vol.114 (4)
Hauptverfasser:	Wang, Z. H., Zhao, W. S., Kang, W., Bouchenak-Khelladi, A., Zhang, Y., Klein, J.-O., Ravelosona, D., Chappert, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Computer simulation Ferroelectric materials Ferroelectricity Fluctuation Logic Random access memory Tunnel junctions
Online-Zugang:	Volltext
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