Influence of indium concentration and growth temperature on the structural and optoelectronic properties of indium selenide thin films

The present work reports the influence of indium concentration and annealing temperature (100–400 °C) on the structural and optoelectronic properties of indium selenide thin films grown using a stack elemental layer technique. The concentration of indium in indium selenide thin films is varied by ad...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2013-01, Vol.250 (1), p.95-102
Hauptverfasser:	Sreekumar, R., Sajeesh, T. H., Abe, T., Kashiwaba, Y., Sudha Kartha, C., Vijayakumar, K. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Carriers Indium indium selenide Indium selenides Optical properties Optoelectronics Phase transformations phase transitions photosensitivity Thin films X-ray diffraction
Online-Zugang:	Volltext
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