Coalescence growth of GaN crystals on point seed crystals using the Na flux method

We have recently shown that dislocation‐free GaN crystals could be grown on a “GaN point seed” by the Na‐flux method. In order to grow larger‐diameter dislocation‐free GaN crystals, we have been trying to coalesce GaN crystals grown from many isolated point seeds. In this study, we found that two Ga...

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Veröffentlicht in:	Physica status solidi. C 2013-03, Vol.10 (3), p.400-404
Hauptverfasser:	Imanishi, M., Murakami, K., Imabayashi, H., Takazawa, H., Todoroki, Y., Matsuo, D., Maruyama, M., Imade, M., Yoshimura, M., Mori, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boundaries Coalescence Coalescing crystal growth Crystals Dislocations Gallium nitrides GaN Na flux method point seed Seeds Solid state physics
Online-Zugang:	Volltext
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