DFT modeling of AlN/GaN multi-quantum wells

Density functional theory simulations have been used to obtain physical properties of AlN/GaN multi‐quantum well (MQW) system characterized by equal width of wells and barriers. Such structure could have different thickness that affects their optical and electronic properties. For thickness up to 4...

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Veröffentlicht in:	Physica status solidi. C 2013-03, Vol.10 (3), p.323-326
Hauptverfasser:	Strak, Pawel, Kempisty, Pawel, Ptasinska, Maria, Krukowski, Stanislaw
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Atomic structure Computing time density functional theory gallium nitride Gallium nitrides multiquantum wells Optical transition Reproduction superlattice Wavefunctions Wells
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