Monolayer Graphene Film on ZnO Nanorod Array for High-Performance Schottky Junction Ultraviolet Photodetectors

A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free‐standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single‐crystalline [0001]‐oriented ZnONR array has a length of about 8–11 μm, and a diameter of 100∼600 nm. Finit...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2013-09, Vol.9 (17), p.2872-2879
Hauptverfasser: Nie, Biao, Hu, Ji-Gang, Luo, Lin-Bao, Xie, Chao, Zeng, Long-Hui, Lv, Peng, Li, Fang-Ze, Jie, Jian-Sheng, Feng, Mei, Wu, Chun-Yan, Yu, Yong-Qiang, Yu, Shu-Hong
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container_issue 17
container_start_page 2872
container_title Small (Weinheim an der Bergstrasse, Germany)
container_volume 9
creator Nie, Biao
Hu, Ji-Gang
Luo, Lin-Bao
Xie, Chao
Zeng, Long-Hui
Lv, Peng
Li, Fang-Ze
Jie, Jian-Sheng
Feng, Mei
Wu, Chun-Yan
Yu, Yong-Qiang
Yu, Shu-Hong
description A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free‐standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single‐crystalline [0001]‐oriented ZnONR array has a length of about 8–11 μm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I–V characteristics in the temperature range of 80–300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices. A new Schottky junction ultraviolet photodetector is fabricated by coating a free‐standing ZnO nanorod array with a monolayer graphene film. This special structure is able to trap UV light within ZnO nanorods, and exhibits high sensitivity to UV light irradiation with good reproducibility and fast response time.
doi_str_mv 10.1002/smll.201203188
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The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices. A new Schottky junction ultraviolet photodetector is fabricated by coating a free‐standing ZnO nanorod array with a monolayer graphene film. This special structure is able to trap UV light within ZnO nanorods, and exhibits high sensitivity to UV light irradiation with good reproducibility and fast response time.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>23495044</pmid><doi>10.1002/smll.201203188</doi><tpages>8</tpages></addata></record>
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source MEDLINE; Wiley Online Library Journals Frontfile Complete
subjects Arrays
Computer simulation
Finite element method
Graphene
Graphite - chemistry
light trapping
Nanomaterials
Nanostructure
Nanostructures - chemistry
Nanotechnology
Nanotechnology - methods
Nanotubes - economics
Photodetectors
Schottky barriers
Ultraviolet Rays
Zinc oxide
Zinc Oxide - chemistry
ZnO nanorod arrays
title Monolayer Graphene Film on ZnO Nanorod Array for High-Performance Schottky Junction Ultraviolet Photodetectors
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