High-field magneto-photoluminescence of semiconductor nanostructures

High-field magneto-photoluminescence of semiconductor nanostructures

The cover of this issue of Luminescence features a graph of the shutter sequence for 0.5‐ms exposures at 17 diff erent fi eld values for an InGaAs linear array with 0.5‐ms readout time as detector.

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Veröffentlicht in:Luminescence (Chichester, England) England), 2012-05, Vol.27 (3), p.np-n/a
Hauptverfasser: Hayne, Manus, Bansal, Bhavtosh
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Sprache:eng
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Indium gallium arsenides
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container_title Luminescence (Chichester, England)
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creator Hayne, Manus
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description The cover of this issue of Luminescence features a graph of the shutter sequence for 0.5‐ms exposures at 17 diff erent fi eld values for an InGaAs linear array with 0.5‐ms readout time as detector.
doi_str_mv 10.1002/bio.2403
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subjects Indium gallium arsenides
title High-field magneto-photoluminescence of semiconductor nanostructures
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