Buffer-less Cu(In,Ga)Se sub(2) solar cells with Zn(O,S):Al transparent conductive oxide film
Transparent conductive oxide Zn(O,S):Al (AZOS) films with S/(S+O) 0.00 to 0.25 were fabricated by co-sputtering of ZnO:Al and ZnS targets. All films showed high transparency of over 80% with edge shift at short wavelength which showed band gap changed as S/(S+O) increased. However, sheet resistance...
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| Veröffentlicht in: | Physica status solidi. C 2013-08, Vol.10 (7-8), p.1026-1030 |
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| creator | Julayhi, Jasmeen Minemoto, Takashi |
| description | Transparent conductive oxide Zn(O,S):Al (AZOS) films with S/(S+O) 0.00 to 0.25 were fabricated by co-sputtering of ZnO:Al and ZnS targets. All films showed high transparency of over 80% with edge shift at short wavelength which showed band gap changed as S/(S+O) increased. However, sheet resistance increased with increased S/(S+O), with over 10 super(4) Omega /sq at S/(S+O) of 0.25. These films were used in the fabrication of buffer-less Cu(In,Ga)Se sub(2) solar cells with cell structure of Al/NiCr/AZOS/CIGS/Mo/SLG. The cell performance increased with S/(S+O), with highest efficiency of 9.05% at S/(S+O) 0.09. However, at higher S/(S+O) cell performance dropped and at 0.25 no cell performance was recorded which was due to the high sheet resistance. ([copy 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201200802 |
| format | Article |
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All films showed high transparency of over 80% with edge shift at short wavelength which showed band gap changed as S/(S+O) increased. However, sheet resistance increased with increased S/(S+O), with over 10 super(4) Omega /sq at S/(S+O) of 0.25. These films were used in the fabrication of buffer-less Cu(In,Ga)Se sub(2) solar cells with cell structure of Al/NiCr/AZOS/CIGS/Mo/SLG. The cell performance increased with S/(S+O), with highest efficiency of 9.05% at S/(S+O) 0.09. However, at higher S/(S+O) cell performance dropped and at 0.25 no cell performance was recorded which was due to the high sheet resistance. ([copy 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201200802</identifier><language>eng</language><subject>Azo ; Buffers ; COATINGS ; COPPER INDIUM SELENIDE ; COPPER SELENIDE ; ELECTRICAL CONDUCTIVITY ; Electrical resistivity ; Oxide coatings ; OXIDE FILMS ; OXIDES ; Photovoltaic cells ; Solar cells ; Solid state physics</subject><ispartof>Physica status solidi. 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However, sheet resistance increased with increased S/(S+O), with over 10 super(4) Omega /sq at S/(S+O) of 0.25. These films were used in the fabrication of buffer-less Cu(In,Ga)Se sub(2) solar cells with cell structure of Al/NiCr/AZOS/CIGS/Mo/SLG. The cell performance increased with S/(S+O), with highest efficiency of 9.05% at S/(S+O) 0.09. However, at higher S/(S+O) cell performance dropped and at 0.25 no cell performance was recorded which was due to the high sheet resistance. ([copy 2013 WILEY-VCH Verlag GmbH & Co. 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C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Julayhi, Jasmeen</au><au>Minemoto, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Buffer-less Cu(In,Ga)Se sub(2) solar cells with Zn(O,S):Al transparent conductive oxide film</atitle><jtitle>Physica status solidi. C</jtitle><date>2013-08-01</date><risdate>2013</risdate><volume>10</volume><issue>7-8</issue><spage>1026</spage><epage>1030</epage><pages>1026-1030</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Transparent conductive oxide Zn(O,S):Al (AZOS) films with S/(S+O) 0.00 to 0.25 were fabricated by co-sputtering of ZnO:Al and ZnS targets. All films showed high transparency of over 80% with edge shift at short wavelength which showed band gap changed as S/(S+O) increased. However, sheet resistance increased with increased S/(S+O), with over 10 super(4) Omega /sq at S/(S+O) of 0.25. These films were used in the fabrication of buffer-less Cu(In,Ga)Se sub(2) solar cells with cell structure of Al/NiCr/AZOS/CIGS/Mo/SLG. The cell performance increased with S/(S+O), with highest efficiency of 9.05% at S/(S+O) 0.09. However, at higher S/(S+O) cell performance dropped and at 0.25 no cell performance was recorded which was due to the high sheet resistance. ([copy 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><doi>10.1002/pssc.201200802</doi></addata></record> |
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| ispartof | Physica status solidi. C, 2013-08, Vol.10 (7-8), p.1026-1030 |
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| language | eng |
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| source | Wiley Journals |
| subjects | Azo Buffers COATINGS COPPER INDIUM SELENIDE COPPER SELENIDE ELECTRICAL CONDUCTIVITY Electrical resistivity Oxide coatings OXIDE FILMS OXIDES Photovoltaic cells Solar cells Solid state physics |
| title | Buffer-less Cu(In,Ga)Se sub(2) solar cells with Zn(O,S):Al transparent conductive oxide film |
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