EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

Extended X‐ray absorption fine structure above the Ga–K edge has been used to study the local structure of heterointerfaces in GaN/AlN multiple quantum wells (MQWs) grown by ammonia molecular beam epitaxy. The thickness of AlN and GaN layers in MQWs were evaluated using transmission electron microsc...

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Veröffentlicht in:	Physica status solidi. C 2013-03, Vol.10 (3), p.311-314
Hauptverfasser:	Zhuravlev, K., Malin, T., Trubina, S., Erenburg, S., Dobos, L., Pecz, B., Davydov, V., Smirnov, A., Kyutt, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride EXAFS spectroscopy Gallium base alloys Gallium nitrides GaN/AlN Interatomic distance Molecular beam epitaxy Molecular structure Quantum wells X-rays
Online-Zugang:	Volltext
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