Accelerated Formation of Metal Oxide Thin Film at 200 °C Using Oxygen Supplied by a Nitric Acid Additive and Residual Organic Suction Vacuum Annealing for Thin-Film Transistor Applications

Oxide semiconductors have gradually replaced amorphous and polycrystalline silicon for thin-film transistor (TFT) because of their high mobility and large-area uniformity. Especially, the oxide semiconductors have also achieved the low-cost manufacturing using a solution process. However, because th...

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Veröffentlicht in:	ACS applied materials & interfaces 2013-09, Vol.5 (18), p.9051-9056
Hauptverfasser:	Jeong, Woong Hee, Kim, Dong Lim, Kim, Hyun Jae
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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