Quantitative dopant distributions in GaAs nanowires using atom probe tomography

Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semicondu...

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Veröffentlicht in:	Ultramicroscopy 2013-09, Vol.132, p.186-192
Hauptverfasser:	Du, Sichao, Burgess, Timothy, Gault, Baptiste, Gao, Qiang, Bao, Peite, Li, Li, Cui, Xiangyuan, Kong Yeoh, Wai, Liu, Hongwei, Yao, Lan, Ceguerra, Anna V., Hoe Tan, Hark, Jagadish, Chennupati, Ringer, Simon P., Zheng, Rongkun
Format:	Artikel
Sprache:	eng
Schlagworte:	Atom probe tomography Dopants Nanowires
Online-Zugang:	Volltext
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