Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization
The formation of scratches on silicon dioxide surfaces during chemical mechanical planarization in the semiconductor manufacturing process is a significant concern, as it adversely affects yield and reliability. In this study, scratch formation during CMP processing of the oxide surface was examined...
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| Veröffentlicht in: | Tribology letters 2013-05, Vol.50 (2), p.169-175 |
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| creator | Kwon, Tae-Young Cho, Byoung-Jun Ramachandran, Manivannan Busnaina, Ahmed A. Park, Jin-Goo |
| description | The formation of scratches on silicon dioxide surfaces during chemical mechanical planarization in the semiconductor manufacturing process is a significant concern, as it adversely affects yield and reliability. In this study, scratch formation during CMP processing of the oxide surface was examined. The shapes of the resulting scratches were classified into three types: chatter mark type, line type, and rolling type. Chatter mark types were further subdivided into line chatter, broken chatter, and group chatter based on the shape. The effect of three different scratch sources (viz., pad debris, dried particles, and diamond particles) on scratch formation was comprehensively investigated. Chatter-mark-type scratches are predominant in the presence of agglomerated particles and pad debris. Group chatter marks are caused by the addition of pad debris. Unique scratch formation was observed on the wafer with different scratch sources. In particular, multiple-line-type scratches were observed in the presence of diamond particles. |
| doi_str_mv | 10.1007/s11249-012-0098-2 |
| format | Article |
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In this study, scratch formation during CMP processing of the oxide surface was examined. The shapes of the resulting scratches were classified into three types: chatter mark type, line type, and rolling type. Chatter mark types were further subdivided into line chatter, broken chatter, and group chatter based on the shape. The effect of three different scratch sources (viz., pad debris, dried particles, and diamond particles) on scratch formation was comprehensively investigated. Chatter-mark-type scratches are predominant in the presence of agglomerated particles and pad debris. Group chatter marks are caused by the addition of pad debris. Unique scratch formation was observed on the wafer with different scratch sources. In particular, multiple-line-type scratches were observed in the presence of diamond particles.</description><identifier>ISSN: 1023-8883</identifier><identifier>EISSN: 1573-2711</identifier><identifier>DOI: 10.1007/s11249-012-0098-2</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Chatter ; Chemical-mechanical polishing ; Chemistry and Materials Science ; Corrosion and Coatings ; Debris ; Diamonds ; Materials Science ; Nanotechnology ; Organic chemistry ; Original Paper ; Oxides ; Physical Chemistry ; Planarization ; Semiconductors ; Shape effects ; Silicon dioxide ; Surfaces and Interfaces ; Theoretical and Applied Mechanics ; Thin Films ; Tribology ; Vibration</subject><ispartof>Tribology letters, 2013-05, Vol.50 (2), p.169-175</ispartof><rights>Springer Science+Business Media New York 2013</rights><rights>Tribology Letters is a copyright of Springer, (2013). 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In this study, scratch formation during CMP processing of the oxide surface was examined. The shapes of the resulting scratches were classified into three types: chatter mark type, line type, and rolling type. Chatter mark types were further subdivided into line chatter, broken chatter, and group chatter based on the shape. The effect of three different scratch sources (viz., pad debris, dried particles, and diamond particles) on scratch formation was comprehensively investigated. Chatter-mark-type scratches are predominant in the presence of agglomerated particles and pad debris. Group chatter marks are caused by the addition of pad debris. Unique scratch formation was observed on the wafer with different scratch sources. In particular, multiple-line-type scratches were observed in the presence of diamond particles.</description><subject>Chatter</subject><subject>Chemical-mechanical polishing</subject><subject>Chemistry and Materials Science</subject><subject>Corrosion and Coatings</subject><subject>Debris</subject><subject>Diamonds</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Organic chemistry</subject><subject>Original Paper</subject><subject>Oxides</subject><subject>Physical Chemistry</subject><subject>Planarization</subject><subject>Semiconductors</subject><subject>Shape effects</subject><subject>Silicon dioxide</subject><subject>Surfaces and Interfaces</subject><subject>Theoretical and Applied Mechanics</subject><subject>Thin Films</subject><subject>Tribology</subject><subject>Vibration</subject><issn>1023-8883</issn><issn>1573-2711</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kE1LAzEURYMoWKs_wN2AGzfRl69OZqnVaqFSobo1xEymTZmPmsyI-utNO4IguEne4tzHuwehUwIXBCC9DIRQnmEgFANkEtM9NCAiZZimhOzHGSjDUkp2iI5CWAPElBQD9DKt321o3VK3rqmTpkgWTeeNxdc62DxZGK9bs0omja964qbzrl4m8w-X22S8spUzukwerFnpejc-lrrW3n3t8GN0UOgy2JOff4ieJ7dP43s8m99Nx1czbDgRLU5zQ0TGNJGUM6G5znnBeAo2k6xgr6BzWwguKM8FzQRY0KYYiTyDdARWjCwbovN-78Y3b10spCoXjC3jLbbpgiKcZrE9EBnRsz_oOjau43WKUklYfBhEivSU8U0I3hZq412l_acioLbGVW9cReNqa1zRmKF9Jmy2jqz_3fx_6Bs3_IKq</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Kwon, Tae-Young</creator><creator>Cho, Byoung-Jun</creator><creator>Ramachandran, Manivannan</creator><creator>Busnaina, Ahmed A.</creator><creator>Park, Jin-Goo</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SR</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization</title><author>Kwon, Tae-Young ; 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In this study, scratch formation during CMP processing of the oxide surface was examined. The shapes of the resulting scratches were classified into three types: chatter mark type, line type, and rolling type. Chatter mark types were further subdivided into line chatter, broken chatter, and group chatter based on the shape. The effect of three different scratch sources (viz., pad debris, dried particles, and diamond particles) on scratch formation was comprehensively investigated. Chatter-mark-type scratches are predominant in the presence of agglomerated particles and pad debris. Group chatter marks are caused by the addition of pad debris. Unique scratch formation was observed on the wafer with different scratch sources. In particular, multiple-line-type scratches were observed in the presence of diamond particles.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11249-012-0098-2</doi><tpages>7</tpages></addata></record> |
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| subjects | Chatter Chemical-mechanical polishing Chemistry and Materials Science Corrosion and Coatings Debris Diamonds Materials Science Nanotechnology Organic chemistry Original Paper Oxides Physical Chemistry Planarization Semiconductors Shape effects Silicon dioxide Surfaces and Interfaces Theoretical and Applied Mechanics Thin Films Tribology Vibration |
| title | Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization |
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