Fabrication of horizontally aligned ultra-long single-walled carbon nanotubes on Si substrates using the fast-heating chemical vapor deposition method

In this paper we study the growth of horizontally aligned ultra-long single-walled carbon nanotubes (SWCNTs) (5 mm) on oxidized silicon substrates by the fast-heating chemical vapor deposition (CVD) method. Ferric chloride ( FeCl 3 ) and ethanol ( C 2 H 5 OH ) solution are used as catalyst and carbo...

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Veröffentlicht in:Advances in natural sciences. Nanoscience and nanotechnology 2012-06, Vol.3 (2), p.25010-1-4
Hauptverfasser: Nguyen, Ba Thang, Than, Xuan Tinh, Nguyen, Van Chuc, Tam Ngo, Thi Thanh, Bui, Hung Thang, Nguyen, Xuan Nghia, Phan, Hong Khoi, Phan, Ngoc Minh
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container_title Advances in natural sciences. Nanoscience and nanotechnology
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creator Nguyen, Ba Thang
Than, Xuan Tinh
Nguyen, Van Chuc
Tam Ngo, Thi Thanh
Bui, Hung Thang
Nguyen, Xuan Nghia
Phan, Hong Khoi
Phan, Ngoc Minh
description In this paper we study the growth of horizontally aligned ultra-long single-walled carbon nanotubes (SWCNTs) (5 mm) on oxidized silicon substrates by the fast-heating chemical vapor deposition (CVD) method. Ferric chloride ( FeCl 3 ) and ethanol ( C 2 H 5 OH ) solution are used as catalyst and carbon source, respectively. The influence of growth conditions such as temperature, time and gas flow rates on the SWCNTs’ growth is studied in detail. The morphologies and structure of the SWCNTs are analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The experimental results demonstrate that by fast-heating CVD of ethanol at a temperature of 900 ° C for 60 min, the SWCNTs have high quality. They are clean, ultra-long (mm), highly dense and as straight as parallel lines.
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subjects Alignment
Chemical vapor deposition
Ethanol
Ethyl alcohol
Nanostructure
Scanning electron microscopy
Silicon substrates
Single wall carbon nanotubes
title Fabrication of horizontally aligned ultra-long single-walled carbon nanotubes on Si substrates using the fast-heating chemical vapor deposition method
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