Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor

We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively...

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Veröffentlicht in:	ACS applied materials & interfaces 2013-08, Vol.5 (16), p.8067-8075
Hauptverfasser:	Park, Jee Ho, Yoo, Young Bum, Lee, Keun Ho, Jang, Woo Soon, Oh, Jin Young, Chae, Soo Sang, Lee, Hyun Woo, Han, Sun Woong, Baik, Hong Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Indium - chemistry Silicon - chemistry Temperature Transistors, Electronic Zirconium - chemistry
Online-Zugang:	Volltext
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