Bandgap Engineering of Strained Monolayer and Bilayer MoS2
We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking th...
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| Veröffentlicht in: | Nano letters 2013-08, Vol.13 (8), p.3626-3630 |
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| container_title | Nano letters |
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| creator | Conley, Hiram J Wang, Bin Ziegler, Jed I Haglund, Richard F Pantelides, Sokrates T Bolotin, Kirill I |
| description | We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E′ Raman mode of MoS2, and extract a Grüneisen parameter of ∼1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ∼45 meV/% strain for monolayer MoS2 and ∼120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ∼1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides. |
| doi_str_mv | 10.1021/nl4014748 |
| format | Article |
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First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E′ Raman mode of MoS2, and extract a Grüneisen parameter of ∼1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ∼45 meV/% strain for monolayer MoS2 and ∼120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ∼1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl4014748</identifier><identifier>PMID: 23819588</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Exact sciences and technology ; Lattice dynamics ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Phonons in low-dimensional structures and small particles ; Physics</subject><ispartof>Nano letters, 2013-08, Vol.13 (8), p.3626-3630</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl4014748$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl4014748$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27663386$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23819588$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Conley, Hiram J</creatorcontrib><creatorcontrib>Wang, Bin</creatorcontrib><creatorcontrib>Ziegler, Jed I</creatorcontrib><creatorcontrib>Haglund, Richard F</creatorcontrib><creatorcontrib>Pantelides, Sokrates T</creatorcontrib><creatorcontrib>Bolotin, Kirill I</creatorcontrib><title>Bandgap Engineering of Strained Monolayer and Bilayer MoS2</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E′ Raman mode of MoS2, and extract a Grüneisen parameter of ∼1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ∼45 meV/% strain for monolayer MoS2 and ∼120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ∼1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Exact sciences and technology</subject><subject>Lattice dynamics</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Phonons in low-dimensional structures and small particles</subject><subject>Physics</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpF0E1LAzEQBuAgiq3Vg39A9iJ4Wc33Jt5sqR_Q4qF6DrNJtmzZZmvSPfTfu9LanmZeeBh4B6Fbgh8JpuQpNBwTXnB1hoZEMJxLren5cVd8gK5SWmGMNRP4Eg0oU0QLpYboeQzBLWGTTcOyDt7HOiyztsoW2wh9dtm8DW0DOx-zHmbjer_P2wW9RhcVNMnfHOYIfb9Ovybv-ezz7WPyMsuBFmSbay4U5pZUnpZa8oK50ikpwDlFGJesAAsF1yAVplBaXXkrhO6zl5W2jrERetjf3cT2p_Npa9Z1sr5pIPi2S4ZwyhkVgvCe3h1oV669M5tYryHuzH_fHtwfACQLTRUh2DqdXCElY0qeHNhkVm0XQ9_QEGz-_m2O_2a_TF9tGg</recordid><startdate>20130814</startdate><enddate>20130814</enddate><creator>Conley, Hiram J</creator><creator>Wang, Bin</creator><creator>Ziegler, Jed I</creator><creator>Haglund, Richard F</creator><creator>Pantelides, Sokrates T</creator><creator>Bolotin, Kirill I</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130814</creationdate><title>Bandgap Engineering of Strained Monolayer and Bilayer MoS2</title><author>Conley, Hiram J ; Wang, Bin ; Ziegler, Jed I ; Haglund, Richard F ; Pantelides, Sokrates T ; Bolotin, Kirill I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a271t-945804c1fe2b96473dbd865add8134637aca749a6802abc9fec5599a6e6f9cd33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</topic><topic>Exact sciences and technology</topic><topic>Lattice dynamics</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Phonons in low-dimensional structures and small particles</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Conley, Hiram J</creatorcontrib><creatorcontrib>Wang, Bin</creatorcontrib><creatorcontrib>Ziegler, Jed I</creatorcontrib><creatorcontrib>Haglund, Richard F</creatorcontrib><creatorcontrib>Pantelides, Sokrates T</creatorcontrib><creatorcontrib>Bolotin, Kirill I</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Conley, Hiram J</au><au>Wang, Bin</au><au>Ziegler, Jed I</au><au>Haglund, Richard F</au><au>Pantelides, Sokrates T</au><au>Bolotin, Kirill I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bandgap Engineering of Strained Monolayer and Bilayer MoS2</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-08-14</date><risdate>2013</risdate><volume>13</volume><issue>8</issue><spage>3626</spage><epage>3630</epage><pages>3626-3630</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We report the influence of uniaxial tensile mechanical strain in the range 0–2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E′ Raman mode of MoS2, and extract a Grüneisen parameter of ∼1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ∼45 meV/% strain for monolayer MoS2 and ∼120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ∼1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23819588</pmid><doi>10.1021/nl4014748</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Lattice dynamics Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Phonons in low-dimensional structures and small particles Physics |
| title | Bandgap Engineering of Strained Monolayer and Bilayer MoS2 |
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