Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers
Type-VIII clathrate Ba sub(8)Ga sub(16)Sn sub(30) is a promising thermoelectric material in the 400-600 K range. We report on the effects of Ge substitution for Sn on both crystal growth and thermoelectric properties. In a series of samples prepared from the initial composition of Ba sub(8)Ga sub(40...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2013-05, Vol.46 (20), p.205302-1-6 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1-6 |
|---|---|
| container_issue | 20 |
| container_start_page | 205302 |
| container_title | Journal of physics. D, Applied physics |
| container_volume | 46 |
| creator | Chen, Y-X Du, B-L Saiga, Y Kajisa, K Takabatake, T |
| description | Type-VIII clathrate Ba sub(8)Ga sub(16)Sn sub(30) is a promising thermoelectric material in the 400-600 K range. We report on the effects of Ge substitution for Sn on both crystal growth and thermoelectric properties. In a series of samples prepared from the initial composition of Ba sub(8)Ga sub(40)Sn sub(30-X)Ge sub(X) (0 less than or equal to X less than or equal to 6), the size of single crystals reaches the maximum of 8 mm at X = 0.5. The atomic composition of single crystals is found to be described as Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) (0 less than or equal to x less than or equal to 4.73). Ge substitution results in the increase in the positive Seebeck coefficient and electrical resistivity by 1.3 and 2 times at the maximum, respectively, whereas the hole carrier density does not change substantially. Taken together with the thermal conductivity data, the maximum of the dimensionless figure of merit ZT reaches 0.87 at 540 K for x = 0.07. |
| doi_str_mv | 10.1088/0022-3727/46/20/205302 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417893231</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1417893231</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_14178932313</originalsourceid><addsrcrecordid>eNqVjs1OwzAQhH0AifLzCmiPzSGNf5omvVJByRnUa-WabWPkxmHtqO078NCYgrgjrfTNaFa7w9i94BPB67rgXMpcVbIqprNC8jSl4vKCjf6CK3YdwjvnvJzVYsQ-F3QKUTvYkT_EFnT3BrFF2nt0aCJZAz35HilaDOC3EE895qumacA4HVvSEeFBQxg24zpb_ghRTubZS3fWKjXLj9kSz-6YwcGmN33-fQdMq2mXoIksUrhll1vtAt798oaNnx5fF895qvAxYIjrvQ0GndMd-iGsxVRU9VxJJdQ_Vr8AETxbOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1417893231</pqid></control><display><type>article</type><title>Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Chen, Y-X ; Du, B-L ; Saiga, Y ; Kajisa, K ; Takabatake, T</creator><creatorcontrib>Chen, Y-X ; Du, B-L ; Saiga, Y ; Kajisa, K ; Takabatake, T</creatorcontrib><description>Type-VIII clathrate Ba sub(8)Ga sub(16)Sn sub(30) is a promising thermoelectric material in the 400-600 K range. We report on the effects of Ge substitution for Sn on both crystal growth and thermoelectric properties. In a series of samples prepared from the initial composition of Ba sub(8)Ga sub(40)Sn sub(30-X)Ge sub(X) (0 less than or equal to X less than or equal to 6), the size of single crystals reaches the maximum of 8 mm at X = 0.5. The atomic composition of single crystals is found to be described as Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) (0 less than or equal to x less than or equal to 4.73). Ge substitution results in the increase in the positive Seebeck coefficient and electrical resistivity by 1.3 and 2 times at the maximum, respectively, whereas the hole carrier density does not change substantially. Taken together with the thermal conductivity data, the maximum of the dimensionless figure of merit ZT reaches 0.87 at 540 K for x = 0.07.</description><identifier>ISSN: 0022-3727</identifier><identifier>DOI: 10.1088/0022-3727/46/20/205302</identifier><language>eng</language><subject>Clathrates ; Crystal growth ; Electrical resistivity ; Germanium ; Heat transfer ; Single crystals ; Thermal conductivity ; Thermoelectricity</subject><ispartof>Journal of physics. D, Applied physics, 2013-05, Vol.46 (20), p.205302-1-6</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Chen, Y-X</creatorcontrib><creatorcontrib>Du, B-L</creatorcontrib><creatorcontrib>Saiga, Y</creatorcontrib><creatorcontrib>Kajisa, K</creatorcontrib><creatorcontrib>Takabatake, T</creatorcontrib><title>Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers</title><title>Journal of physics. D, Applied physics</title><description>Type-VIII clathrate Ba sub(8)Ga sub(16)Sn sub(30) is a promising thermoelectric material in the 400-600 K range. We report on the effects of Ge substitution for Sn on both crystal growth and thermoelectric properties. In a series of samples prepared from the initial composition of Ba sub(8)Ga sub(40)Sn sub(30-X)Ge sub(X) (0 less than or equal to X less than or equal to 6), the size of single crystals reaches the maximum of 8 mm at X = 0.5. The atomic composition of single crystals is found to be described as Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) (0 less than or equal to x less than or equal to 4.73). Ge substitution results in the increase in the positive Seebeck coefficient and electrical resistivity by 1.3 and 2 times at the maximum, respectively, whereas the hole carrier density does not change substantially. Taken together with the thermal conductivity data, the maximum of the dimensionless figure of merit ZT reaches 0.87 at 540 K for x = 0.07.</description><subject>Clathrates</subject><subject>Crystal growth</subject><subject>Electrical resistivity</subject><subject>Germanium</subject><subject>Heat transfer</subject><subject>Single crystals</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><issn>0022-3727</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVjs1OwzAQhH0AifLzCmiPzSGNf5omvVJByRnUa-WabWPkxmHtqO078NCYgrgjrfTNaFa7w9i94BPB67rgXMpcVbIqprNC8jSl4vKCjf6CK3YdwjvnvJzVYsQ-F3QKUTvYkT_EFnT3BrFF2nt0aCJZAz35HilaDOC3EE895qumacA4HVvSEeFBQxg24zpb_ghRTubZS3fWKjXLj9kSz-6YwcGmN33-fQdMq2mXoIksUrhll1vtAt798oaNnx5fF895qvAxYIjrvQ0GndMd-iGsxVRU9VxJJdQ_Vr8AETxbOg</recordid><startdate>20130522</startdate><enddate>20130522</enddate><creator>Chen, Y-X</creator><creator>Du, B-L</creator><creator>Saiga, Y</creator><creator>Kajisa, K</creator><creator>Takabatake, T</creator><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130522</creationdate><title>Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers</title><author>Chen, Y-X ; Du, B-L ; Saiga, Y ; Kajisa, K ; Takabatake, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_14178932313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Clathrates</topic><topic>Crystal growth</topic><topic>Electrical resistivity</topic><topic>Germanium</topic><topic>Heat transfer</topic><topic>Single crystals</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Y-X</creatorcontrib><creatorcontrib>Du, B-L</creatorcontrib><creatorcontrib>Saiga, Y</creatorcontrib><creatorcontrib>Kajisa, K</creatorcontrib><creatorcontrib>Takabatake, T</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Y-X</au><au>Du, B-L</au><au>Saiga, Y</au><au>Kajisa, K</au><au>Takabatake, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2013-05-22</date><risdate>2013</risdate><volume>46</volume><issue>20</issue><spage>205302</spage><epage>1-6</epage><pages>205302-1-6</pages><issn>0022-3727</issn><abstract>Type-VIII clathrate Ba sub(8)Ga sub(16)Sn sub(30) is a promising thermoelectric material in the 400-600 K range. We report on the effects of Ge substitution for Sn on both crystal growth and thermoelectric properties. In a series of samples prepared from the initial composition of Ba sub(8)Ga sub(40)Sn sub(30-X)Ge sub(X) (0 less than or equal to X less than or equal to 6), the size of single crystals reaches the maximum of 8 mm at X = 0.5. The atomic composition of single crystals is found to be described as Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) (0 less than or equal to x less than or equal to 4.73). Ge substitution results in the increase in the positive Seebeck coefficient and electrical resistivity by 1.3 and 2 times at the maximum, respectively, whereas the hole carrier density does not change substantially. Taken together with the thermal conductivity data, the maximum of the dimensionless figure of merit ZT reaches 0.87 at 540 K for x = 0.07.</abstract><doi>10.1088/0022-3727/46/20/205302</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-3727 |
| ispartof | Journal of physics. D, Applied physics, 2013-05, Vol.46 (20), p.205302-1-6 |
| issn | 0022-3727 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1417893231 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Clathrates Crystal growth Electrical resistivity Germanium Heat transfer Single crystals Thermal conductivity Thermoelectricity |
| title | Crystal growth and thermoelectric properties of type-VIII clathrate Ba sub(8)Ga sub(15.9)Sn sub(30.1-x)Ge sub(x) with p-type charge carriers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T23%3A12%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Crystal%20growth%20and%20thermoelectric%20properties%20of%20type-VIII%20clathrate%20Ba%20sub(8)Ga%20sub(15.9)Sn%20sub(30.1-x)Ge%20sub(x)%20with%20p-type%20charge%20carriers&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Chen,%20Y-X&rft.date=2013-05-22&rft.volume=46&rft.issue=20&rft.spage=205302&rft.epage=1-6&rft.pages=205302-1-6&rft.issn=0022-3727&rft_id=info:doi/10.1088/0022-3727/46/20/205302&rft_dat=%3Cproquest%3E1417893231%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1417893231&rft_id=info:pmid/&rfr_iscdi=true |