Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks

This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO2 nanomasks by metal–organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threading...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2012-12, Vol.101 (23)
Hauptverfasser:	Lin, Da-Wei, Lee, Chia-Yu, Liu, Che-Yu, Han, Hau-Vei, Lan, Yu-Pin, Lin, Chien-Chung, Chi, Gou-Chung, Kuo, Hao-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitrides Indium gallium nitrides Light-emitting diodes Nanocomposites Nanomaterials Nanorods Nanostructure Silicon dioxide
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!