Bipolar conductivity in nanocrystallized TiO2

This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band cond...

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Veröffentlicht in:Applied physics letters 2012-07, Vol.101 (3)
Hauptverfasser: Islamov, D. R., Gritsenko, V. A., Cheng, C. H., Chin, A.
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container_title Applied physics letters
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creator Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
description This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band conductivity.
doi_str_mv 10.1063/1.4737016
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects Conduction
Mathematical analysis
Minority carriers
Nanocrystals
Nickel
Silicon
Titanium dioxide
title Bipolar conductivity in nanocrystallized TiO2
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