Bipolar conductivity in nanocrystallized TiO2

This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band cond...

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Veröffentlicht in:Applied physics letters 2012-07, Vol.101 (3)
Hauptverfasser: Islamov, D. R., Gritsenko, V. A., Cheng, C. H., Chin, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO2, enabling two-band conductivity.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4737016