Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-o...

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Veröffentlicht in:	Applied physics letters 2012-11, Vol.101 (21)
Hauptverfasser:	Chinone, N, Yamasue, K, Hiranaga, Y, Honda, K, Cho, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Boundaries Cross sections Dielectric constant Microscopy MOSFETs Nonlinearity Scanning
Online-Zugang:	Volltext
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