Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants
Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-o...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2012-11, Vol.101 (21) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 21 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 101 |
| creator | Chinone, N Yamasue, K Hiranaga, Y Honda, K Cho, Y |
| description | Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET. |
| doi_str_mv | 10.1063/1.4766349 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417880718</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1417880718</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-6e464f0d081c2b5a2d430687d1c0e3bc8173fd6a8ad76e0bcc51ab0fef36a5c13</originalsourceid><addsrcrecordid>eNqFkUFLxDAUhIMouK4e_Ac56qFrXtMm2aMsugoLXvRc0vR1N9ImNUmF_Qn-a7vsHgVPw8A3A-8NIbfAFsAEf4BFIYXgxfKMzIBJmXEAdU5mjDGeiWUJl-Qqxs_JljnnM_Kz0QmD7mjA6LsxWe-o7Yfgv7FHl6h1NBrtnHVb6rzrrEMdaGOxQ5OCNbS3Jvho_LCn9Z72qOMYDnAcBwzZzm53k_jQYPg7b7yLSbsUr8lFq7uINyedk4_np_fVS7Z5W7-uHjeZ4QJSJrAQRcsapsDkdanzpuBMKNmAYchro0DythFa6UYKZLUxJeiatdhyoUsDfE7ujr3TkV8jxlT1NhrsOu3Qj7GCAqRSTIL6H-U5z_NcqWJC74_o4RsxYFsNwfY67Ctg1WGZCqrTMvwXyrWEfQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323222884</pqid></control><display><type>article</type><title>Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Chinone, N ; Yamasue, K ; Hiranaga, Y ; Honda, K ; Cho, Y</creator><creatorcontrib>Chinone, N ; Yamasue, K ; Hiranaga, Y ; Honda, K ; Cho, Y</creatorcontrib><description>Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4766349</identifier><language>eng</language><subject>Boundaries ; Cross sections ; Dielectric constant ; Microscopy ; MOSFETs ; Nonlinearity ; Scanning</subject><ispartof>Applied physics letters, 2012-11, Vol.101 (21)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-6e464f0d081c2b5a2d430687d1c0e3bc8173fd6a8ad76e0bcc51ab0fef36a5c13</citedby><cites>FETCH-LOGICAL-c361t-6e464f0d081c2b5a2d430687d1c0e3bc8173fd6a8ad76e0bcc51ab0fef36a5c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chinone, N</creatorcontrib><creatorcontrib>Yamasue, K</creatorcontrib><creatorcontrib>Hiranaga, Y</creatorcontrib><creatorcontrib>Honda, K</creatorcontrib><creatorcontrib>Cho, Y</creatorcontrib><title>Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants</title><title>Applied physics letters</title><description>Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.</description><subject>Boundaries</subject><subject>Cross sections</subject><subject>Dielectric constant</subject><subject>Microscopy</subject><subject>MOSFETs</subject><subject>Nonlinearity</subject><subject>Scanning</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkUFLxDAUhIMouK4e_Ac56qFrXtMm2aMsugoLXvRc0vR1N9ImNUmF_Qn-a7vsHgVPw8A3A-8NIbfAFsAEf4BFIYXgxfKMzIBJmXEAdU5mjDGeiWUJl-Qqxs_JljnnM_Kz0QmD7mjA6LsxWe-o7Yfgv7FHl6h1NBrtnHVb6rzrrEMdaGOxQ5OCNbS3Jvho_LCn9Z72qOMYDnAcBwzZzm53k_jQYPg7b7yLSbsUr8lFq7uINyedk4_np_fVS7Z5W7-uHjeZ4QJSJrAQRcsapsDkdanzpuBMKNmAYchro0DythFa6UYKZLUxJeiatdhyoUsDfE7ujr3TkV8jxlT1NhrsOu3Qj7GCAqRSTIL6H-U5z_NcqWJC74_o4RsxYFsNwfY67Ctg1WGZCqrTMvwXyrWEfQ</recordid><startdate>20121119</startdate><enddate>20121119</enddate><creator>Chinone, N</creator><creator>Yamasue, K</creator><creator>Hiranaga, Y</creator><creator>Honda, K</creator><creator>Cho, Y</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121119</creationdate><title>Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants</title><author>Chinone, N ; Yamasue, K ; Hiranaga, Y ; Honda, K ; Cho, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-6e464f0d081c2b5a2d430687d1c0e3bc8173fd6a8ad76e0bcc51ab0fef36a5c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Boundaries</topic><topic>Cross sections</topic><topic>Dielectric constant</topic><topic>Microscopy</topic><topic>MOSFETs</topic><topic>Nonlinearity</topic><topic>Scanning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chinone, N</creatorcontrib><creatorcontrib>Yamasue, K</creatorcontrib><creatorcontrib>Hiranaga, Y</creatorcontrib><creatorcontrib>Honda, K</creatorcontrib><creatorcontrib>Cho, Y</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chinone, N</au><au>Yamasue, K</au><au>Hiranaga, Y</au><au>Honda, K</au><au>Cho, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants</atitle><jtitle>Applied physics letters</jtitle><date>2012-11-19</date><risdate>2012</risdate><volume>101</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.</abstract><doi>10.1063/1.4766349</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-11, Vol.101 (21) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1417880718 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Boundaries Cross sections Dielectric constant Microscopy MOSFETs Nonlinearity Scanning |
| title | Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T08%3A14%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lateral%20resolution%20improvement%20in%20scanning%20nonlinear%20dielectric%20microscopy%20by%20measuring%20super-higher-order%20nonlinear%20dielectric%20constants&rft.jtitle=Applied%20physics%20letters&rft.au=Chinone,%20N&rft.date=2012-11-19&rft.volume=101&rft.issue=21&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4766349&rft_dat=%3Cproquest_cross%3E1417880718%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1323222884&rft_id=info:pmid/&rfr_iscdi=true |