Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth o...
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| Veröffentlicht in: | Applied physics letters 2012-11, Vol.101 (21) |
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| container_title | Applied physics letters |
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| creator | Wei, Tongbo Wu, Kui Lan, Ding Yan, Qingfeng Chen, Yu Du, Chengxiao Wang, Junxi Zeng, Yiping Li, Jinmin |
| description | We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs. |
| doi_str_mv | 10.1063/1.4767334 |
| format | Article |
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The PhC structures were realized by the selective area growth of p-GaN using SiO2 nanodisks, which were patterned utilizing a self-assembled nanosphere as an optical lens. Without prejudice to the electrical properties of LEDs, the light output power (at 350 mA) of LEDs with the SiO2 and corresponding air-hole PhC was enhanced by 71.3% and 49.3%, respectively, compared to that without PhC. The LEDs with selectively grown PhC structures were found to exhibit partial compression strain release and reduced emission divergence. The finite-difference time-domain simulation was also performed to further reveal the emission characteristics of PhC LEDs.</description><subject>Finite difference method</subject><subject>Indium gallium nitrides</subject><subject>Lithography</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Photonic crystals</subject><subject>Silicon dioxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkU1LwzAAhoMoOKcH_0GOeujMV5PmKEPnYOhBPZc0TddIltQkVQr-eCfb3dPLAw_v5QHgGqMFRpze4QUTXFDKTsAMIyEKinF1CmYIIVpwWeJzcJHSxx5LQukM_LwaZ3S2X8ZNcBvDt4dDH3LwVkMdp5SVgynHUecxmgS7EGFvtz00XWe1NV5PcO1X6hmanc3Z-i1sbWj35pj-wCsf0tCbaLVyhTM-QWdzH7ZRDf10Cc465ZK5Ou4cvD8-vC2fis3Lar283xSaSp4LrctWU8UkE4wKRBgjlUK8bUolOklKZmSDiUK4UY0WpKm0rCpDGySVIEJgOgc3h98hhs_RpFzvbNLGOeVNGFONGRZVhXjJ_1cpoYRQLsVevT2oOoaUounqIdqdilONUf0Xo8b1MQb9BecIfeU</recordid><startdate>20121119</startdate><enddate>20121119</enddate><creator>Wei, Tongbo</creator><creator>Wu, Kui</creator><creator>Lan, Ding</creator><creator>Yan, Qingfeng</creator><creator>Chen, Yu</creator><creator>Du, Chengxiao</creator><creator>Wang, Junxi</creator><creator>Zeng, Yiping</creator><creator>Li, Jinmin</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121119</creationdate><title>Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography</title><author>Wei, Tongbo ; Wu, Kui ; Lan, Ding ; Yan, Qingfeng ; Chen, Yu ; Du, Chengxiao ; Wang, Junxi ; Zeng, Yiping ; Li, Jinmin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c396t-cc5dc3a4947437024428a06db5a7f9254e9b12a01babc72b8c988e3b09a727713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Finite difference method</topic><topic>Indium gallium nitrides</topic><topic>Lithography</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Photonic crystals</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei, Tongbo</creatorcontrib><creatorcontrib>Wu, Kui</creatorcontrib><creatorcontrib>Lan, Ding</creatorcontrib><creatorcontrib>Yan, Qingfeng</creatorcontrib><creatorcontrib>Chen, Yu</creatorcontrib><creatorcontrib>Du, Chengxiao</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Zeng, Yiping</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wei, Tongbo</au><au>Wu, Kui</au><au>Lan, Ding</au><au>Yan, Qingfeng</au><au>Chen, Yu</au><au>Du, Chengxiao</au><au>Wang, Junxi</au><au>Zeng, Yiping</au><au>Li, Jinmin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography</atitle><jtitle>Applied physics letters</jtitle><date>2012-11-19</date><risdate>2012</risdate><volume>101</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report a low-cost and high-throughput process for the fabrication of two-dimensional SiO2 photonic crystal (PhC) by nanospherical-lens photolithography method to improve the light extraction of GaN-based light-emitting diodes (LEDs). 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| ispartof | Applied physics letters, 2012-11, Vol.101 (21) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Finite difference method Indium gallium nitrides Lithography Nanocomposites Nanomaterials Nanostructure Photonic crystals Silicon dioxide |
| title | Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography |
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