Leakage Current-Forming Voltage Relation and Oxygen Gettering in rm HfO rm x RRAM Devices

We observe a trend between initial leakage currents in polycrystalline rm HfO rm x resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen de...

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Veröffentlicht in:	IEEE electron device letters 2013-06, Vol.34 (6), p.750-752
Hauptverfasser:	Young-Fisher, Kristina G, Bersuker, Gennadi, Butcher, Brian, Padovani, Andrea, Larcher, Luca, Veksler, D, Gilmer, David C
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Electric potential Forming Grain boundaries Leakage current Switching Trends Voltage
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creator	Young-Fisher, Kristina G Bersuker, Gennadi Butcher, Brian Padovani, Andrea Larcher, Luca Veksler, D Gilmer, David C
description	We observe a trend between initial leakage currents in polycrystalline rm HfO rm x resisitive random access memory (RRAM) cells (before forming) and the forming voltages. This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in rm HfO rm x . One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. In addition, we find that by engineering the RRAM stack, the forming voltage can be tuned-up to meet specific RRAM requirements, such as lower power and forming-less operations.
doi_str_mv	10.1109/LED.2013.2256101
format	Article
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This trend points to the dominant role played by conduction paths located at grain boundaries, which is promoted by the oxygen deficiency in rm HfO rm x . One of these paths is then converted into the conductive filament responsible for nonvolatile resistance switching. 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subjects	Devices Electric potential Forming Grain boundaries Leakage current Switching Trends Voltage
title	Leakage Current-Forming Voltage Relation and Oxygen Gettering in rm HfO rm x RRAM Devices
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