Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices
Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2012-12, Vol.101 (25) |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 25 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 101 |
| creator | Sakuraba, Y. Ueda, M. Miura, Y. Sato, K. Bosu, S. Saito, K. Shirai, M. Konno, T. J. Takanashi, K. |
| description | Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives. |
| doi_str_mv | 10.1063/1.4772546 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417870302</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1417870302</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3226-67b65822a6d46f809bf363edf5b349a8ccea3e800e45cbf320f43ca9ae6062b93</originalsourceid><addsrcrecordid>eNotkE9Lw0AUxBdRsFYPfoM9tmDq_kk2yVFKq0LFg3oOL5u3dSXZ1Lxtsd_eiD0Nw_wYhmHsVoqFFEbfy0Wa5ypLzRmbSJHniZayOGcTIYROTJnJS3ZF9DXaTGk9YbD6iRjIH5BT3DdH3ju-9RAi72AbMPYDkqcIwSLfDf0Oh-iRuA_8E1qXdBihbb3ly17N1nj3EuZvPqmBsOENHrxFumYXDlrCm5NO2cd69b58Sjavj8_Lh01itVImMXltskIpME1qXCHK2mmjsXFZrdMSCmsRNBZCYJrZMVPCpdpCCWiEUXWpp2z23zvO_N4jxarzZLFtIWC_p0qmMi9yoYUa0fk_aoeeaEBX7QbfwXCspKj-bqxkdbpR_wIz2WSy</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1417870302</pqid></control><display><type>article</type><title>Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Sakuraba, Y. ; Ueda, M. ; Miura, Y. ; Sato, K. ; Bosu, S. ; Saito, K. ; Shirai, M. ; Konno, T. J. ; Takanashi, K.</creator><creatorcontrib>Sakuraba, Y. ; Ueda, M. ; Miura, Y. ; Sato, K. ; Bosu, S. ; Saito, K. ; Shirai, M. ; Konno, T. J. ; Takanashi, K.</creatorcontrib><description>Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4772546</identifier><language>eng</language><subject>Devices ; Disk drives ; Epitaxy ; Giant magnetoresistance ; Iron ; Magnetoresistance ; Magnetoresistivity ; Manganese</subject><ispartof>Applied physics letters, 2012-12, Vol.101 (25)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3226-67b65822a6d46f809bf363edf5b349a8ccea3e800e45cbf320f43ca9ae6062b93</citedby><cites>FETCH-LOGICAL-c3226-67b65822a6d46f809bf363edf5b349a8ccea3e800e45cbf320f43ca9ae6062b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Sakuraba, Y.</creatorcontrib><creatorcontrib>Ueda, M.</creatorcontrib><creatorcontrib>Miura, Y.</creatorcontrib><creatorcontrib>Sato, K.</creatorcontrib><creatorcontrib>Bosu, S.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Shirai, M.</creatorcontrib><creatorcontrib>Konno, T. J.</creatorcontrib><creatorcontrib>Takanashi, K.</creatorcontrib><title>Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices</title><title>Applied physics letters</title><description>Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives.</description><subject>Devices</subject><subject>Disk drives</subject><subject>Epitaxy</subject><subject>Giant magnetoresistance</subject><subject>Iron</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Manganese</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkE9Lw0AUxBdRsFYPfoM9tmDq_kk2yVFKq0LFg3oOL5u3dSXZ1Lxtsd_eiD0Nw_wYhmHsVoqFFEbfy0Wa5ypLzRmbSJHniZayOGcTIYROTJnJS3ZF9DXaTGk9YbD6iRjIH5BT3DdH3ju-9RAi72AbMPYDkqcIwSLfDf0Oh-iRuA_8E1qXdBihbb3ly17N1nj3EuZvPqmBsOENHrxFumYXDlrCm5NO2cd69b58Sjavj8_Lh01itVImMXltskIpME1qXCHK2mmjsXFZrdMSCmsRNBZCYJrZMVPCpdpCCWiEUXWpp2z23zvO_N4jxarzZLFtIWC_p0qmMi9yoYUa0fk_aoeeaEBX7QbfwXCspKj-bqxkdbpR_wIz2WSy</recordid><startdate>20121217</startdate><enddate>20121217</enddate><creator>Sakuraba, Y.</creator><creator>Ueda, M.</creator><creator>Miura, Y.</creator><creator>Sato, K.</creator><creator>Bosu, S.</creator><creator>Saito, K.</creator><creator>Shirai, M.</creator><creator>Konno, T. J.</creator><creator>Takanashi, K.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121217</creationdate><title>Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices</title><author>Sakuraba, Y. ; Ueda, M. ; Miura, Y. ; Sato, K. ; Bosu, S. ; Saito, K. ; Shirai, M. ; Konno, T. J. ; Takanashi, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3226-67b65822a6d46f809bf363edf5b349a8ccea3e800e45cbf320f43ca9ae6062b93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Devices</topic><topic>Disk drives</topic><topic>Epitaxy</topic><topic>Giant magnetoresistance</topic><topic>Iron</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Manganese</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sakuraba, Y.</creatorcontrib><creatorcontrib>Ueda, M.</creatorcontrib><creatorcontrib>Miura, Y.</creatorcontrib><creatorcontrib>Sato, K.</creatorcontrib><creatorcontrib>Bosu, S.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Shirai, M.</creatorcontrib><creatorcontrib>Konno, T. J.</creatorcontrib><creatorcontrib>Takanashi, K.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakuraba, Y.</au><au>Ueda, M.</au><au>Miura, Y.</au><au>Sato, K.</au><au>Bosu, S.</au><au>Saito, K.</au><au>Shirai, M.</au><au>Konno, T. J.</au><au>Takanashi, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices</atitle><jtitle>Applied physics letters</jtitle><date>2012-12-17</date><risdate>2012</risdate><volume>101</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives.</abstract><doi>10.1063/1.4772546</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-12, Vol.101 (25) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1417870302 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Devices Disk drives Epitaxy Giant magnetoresistance Iron Magnetoresistance Magnetoresistivity Manganese |
| title | Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T05%3A43%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Extensive%20study%20of%20giant%20magnetoresistance%20properties%20in%20half-metallic%20Co2(Fe,Mn)Si-based%20devices&rft.jtitle=Applied%20physics%20letters&rft.au=Sakuraba,%20Y.&rft.date=2012-12-17&rft.volume=101&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4772546&rft_dat=%3Cproquest_cross%3E1417870302%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1417870302&rft_id=info:pmid/&rfr_iscdi=true |