Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer

Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, whic...

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Veröffentlicht in:	Applied physics letters 2012-12, Vol.101 (25)
Hauptverfasser:	Wang, Liang-Wei, Shih, Wen-Chieh, Wu, Yun-Chung, Lai, Chih-Huang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Ferrous alloys Intermetallics Iron compounds Light absorption Platinum compounds Silicon Tensile stress
Online-Zugang:	Volltext
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