Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer
Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, whic...
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Veröffentlicht in: | Applied physics letters 2012-12, Vol.101 (25) |
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creator | Wang, Liang-Wei Shih, Wen-Chieh Wu, Yun-Chung Lai, Chih-Huang |
description | Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops. |
doi_str_mv | 10.1063/1.4772072 |
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fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417868235</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1417868235</sourcerecordid><originalsourceid>FETCH-LOGICAL-p103t-1862579602cbd2ed5f8c15fdcc4a49e52ecfa9c338e375e66cd07c72f01fd0753</originalsourceid><addsrcrecordid>eNotjL1OwzAYAD2ARCkMvIFHFhf_xHYyoopCpUh0ANbKcT43Rk4cbFeob08FTHe3HEJ3jK4YVeKBrSqtOdX8Ai0opYKoRrIrdJ3z5zklF2KBPnYpjrH4OOHoMInJw1Sgxy2jZAO7grsTTmb2PS4DpNEEbKYJTPDTAX_7MuDgD0PBpssxzb-bYE6QbtClMyHD7T-X6H3z9LZ-Ie3r83b92JKZUVEIqxWXulGU267n0EtXWyZdb21lqgYkB-tMY4WoQWgJStmeaqu5o8ydTYoluv_7zil-HSGX_eizhRDMBPGY96xiulY1F1L8ADiKUbk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1417868235</pqid></control><display><type>article</type><title>Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Wang, Liang-Wei ; Shih, Wen-Chieh ; Wu, Yun-Chung ; Lai, Chih-Huang</creator><creatorcontrib>Wang, Liang-Wei ; Shih, Wen-Chieh ; Wu, Yun-Chung ; Lai, Chih-Huang</creatorcontrib><description>Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.</description><identifier>ISSN: 0003-6951</identifier><identifier>DOI: 10.1063/1.4772072</identifier><language>eng</language><subject>Annealing ; Ferrous alloys ; Intermetallics ; Iron compounds ; Light absorption ; Platinum compounds ; Silicon ; Tensile stress</subject><ispartof>Applied physics letters, 2012-12, Vol.101 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Wang, Liang-Wei</creatorcontrib><creatorcontrib>Shih, Wen-Chieh</creatorcontrib><creatorcontrib>Wu, Yun-Chung</creatorcontrib><creatorcontrib>Lai, Chih-Huang</creatorcontrib><title>Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer</title><title>Applied physics letters</title><description>Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.</description><subject>Annealing</subject><subject>Ferrous alloys</subject><subject>Intermetallics</subject><subject>Iron compounds</subject><subject>Light absorption</subject><subject>Platinum compounds</subject><subject>Silicon</subject><subject>Tensile stress</subject><issn>0003-6951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotjL1OwzAYAD2ARCkMvIFHFhf_xHYyoopCpUh0ANbKcT43Rk4cbFeob08FTHe3HEJ3jK4YVeKBrSqtOdX8Ai0opYKoRrIrdJ3z5zklF2KBPnYpjrH4OOHoMInJw1Sgxy2jZAO7grsTTmb2PS4DpNEEbKYJTPDTAX_7MuDgD0PBpssxzb-bYE6QbtClMyHD7T-X6H3z9LZ-Ie3r83b92JKZUVEIqxWXulGU267n0EtXWyZdb21lqgYkB-tMY4WoQWgJStmeaqu5o8ydTYoluv_7zil-HSGX_eizhRDMBPGY96xiulY1F1L8ADiKUbk</recordid><startdate>20121217</startdate><enddate>20121217</enddate><creator>Wang, Liang-Wei</creator><creator>Shih, Wen-Chieh</creator><creator>Wu, Yun-Chung</creator><creator>Lai, Chih-Huang</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121217</creationdate><title>Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer</title><author>Wang, Liang-Wei ; Shih, Wen-Chieh ; Wu, Yun-Chung ; Lai, Chih-Huang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p103t-1862579602cbd2ed5f8c15fdcc4a49e52ecfa9c338e375e66cd07c72f01fd0753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Annealing</topic><topic>Ferrous alloys</topic><topic>Intermetallics</topic><topic>Iron compounds</topic><topic>Light absorption</topic><topic>Platinum compounds</topic><topic>Silicon</topic><topic>Tensile stress</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Liang-Wei</creatorcontrib><creatorcontrib>Shih, Wen-Chieh</creatorcontrib><creatorcontrib>Wu, Yun-Chung</creatorcontrib><creatorcontrib>Lai, Chih-Huang</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Liang-Wei</au><au>Shih, Wen-Chieh</au><au>Wu, Yun-Chung</au><au>Lai, Chih-Huang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer</atitle><jtitle>Applied physics letters</jtitle><date>2012-12-17</date><risdate>2012</risdate><volume>101</volume><issue>25</issue><issn>0003-6951</issn><abstract>Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.</abstract><doi>10.1063/1.4772072</doi></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
subjects | Annealing Ferrous alloys Intermetallics Iron compounds Light absorption Platinum compounds Silicon Tensile stress |
title | Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer |
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