Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer

Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, whic...

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Veröffentlicht in:Applied physics letters 2012-12, Vol.101 (25)
Hauptverfasser: Wang, Liang-Wei, Shih, Wen-Chieh, Wu, Yun-Chung, Lai, Chih-Huang
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Shih, Wen-Chieh
Wu, Yun-Chung
Lai, Chih-Huang
description Highly [001]-oriented L10-FePt grown on SiO2[Verbar]Si is achieved by using rapid thermal annealing (RTA) at 400 degree C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.
doi_str_mv 10.1063/1.4772072
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Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.</abstract><doi>10.1063/1.4772072</doi></addata></record>
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects Annealing
Ferrous alloys
Intermetallics
Iron compounds
Light absorption
Platinum compounds
Silicon
Tensile stress
title Promotion of -oriented L10-FePt by rapid thermal annealing with light absorption layer
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