Matching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators
In this article a new method is presented that allows for low loss implementation of fast carrier transport structures in diffraction limited photonic crystal resonators. We utilize a 'node-matched doping' process in which precise silicon doping results in comb-like shaped, highly-doped di...
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| Veröffentlicht in: | Optics express 2013-07, Vol.21 (13), p.16210-16221 |
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| container_title | Optics express |
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| creator | Meister, Stefan Rhee, Hanjo Al-Saadi, Aws Franke, Bülent A Kupijai, Sebastian Theiss, Christoph Zimmermann, Lars Tillack, Bernd Richter, Harald H Tian, Hui Stolarek, David Schneider, Thomas Woggon, Ulrike Eichler, Hans J |
| description | In this article a new method is presented that allows for low loss implementation of fast carrier transport structures in diffraction limited photonic crystal resonators. We utilize a 'node-matched doping' process in which precise silicon doping results in comb-like shaped, highly-doped diode areas that are matched to the spatial field distribution of the optical modes of a Fabry-Pérot resonator. While the doping is only applied to areas with low optical field strength, the intrinsic diode region overlaps with an optical field maximum. The presented node-matched diode-modulators, combining small size, high-speed, thermal stability and energy-efficient switching could become the centerpiece for monolithically integrated transceivers. |
| doi_str_mv | 10.1364/OE.21.016210 |
| format | Article |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| title | Matching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators |
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