The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors

GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science in semiconductor processing 2013-06, Vol.16 (3), p.752-758
Hauptverfasser: Bidadi, H, Mohammadi Aref, S, Ghafouri, M, Parhizkar, M, Olad, A
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 758
container_issue 3
container_start_page 752
container_title Materials science in semiconductor processing
container_volume 16
creator Bidadi, H
Mohammadi Aref, S
Ghafouri, M
Parhizkar, M
Olad, A
description GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1372633409</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1372633409</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_13726334093</originalsourceid><addsrcrecordid>eNqVjLtuAjEQRV0QKeTxD1PSIHlxsoQ6IuID6NHIuctO5LUXzywSXT49QkHpU51bnHtmbt6EdrN88765dw-qX97711XTzt33vgeh6xCNSkcq2VAlH8kwjKhsUwWVTGeuolYqxZ4rx6ukJlGvpyOnJNNAXBVZPsFjSRfOkiT_blh_ScigWIaxqBj-evrk7jpOiucbH93iY7t_3y3HWk4T1A6DaERKnFEmPTRhvWpDePGb8A_1B4s6VxM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1372633409</pqid></control><display><type>article</type><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><source>Elsevier ScienceDirect Journals</source><creator>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</creator><creatorcontrib>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</creatorcontrib><description>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</description><identifier>ISSN: 1369-8001</identifier><language>eng</language><subject>Electric potential ; Electronic devices ; Materials science ; Nonlinearity ; Semiconductors ; Sintering ; Varistors ; Voltage</subject><ispartof>Materials science in semiconductor processing, 2013-06, Vol.16 (3), p.752-758</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Bidadi, H</creatorcontrib><creatorcontrib>Mohammadi Aref, S</creatorcontrib><creatorcontrib>Ghafouri, M</creatorcontrib><creatorcontrib>Parhizkar, M</creatorcontrib><creatorcontrib>Olad, A</creatorcontrib><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><title>Materials science in semiconductor processing</title><description>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</description><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Materials science</subject><subject>Nonlinearity</subject><subject>Semiconductors</subject><subject>Sintering</subject><subject>Varistors</subject><subject>Voltage</subject><issn>1369-8001</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVjLtuAjEQRV0QKeTxD1PSIHlxsoQ6IuID6NHIuctO5LUXzywSXT49QkHpU51bnHtmbt6EdrN88765dw-qX97711XTzt33vgeh6xCNSkcq2VAlH8kwjKhsUwWVTGeuolYqxZ4rx6ukJlGvpyOnJNNAXBVZPsFjSRfOkiT_blh_ScigWIaxqBj-evrk7jpOiucbH93iY7t_3y3HWk4T1A6DaERKnFEmPTRhvWpDePGb8A_1B4s6VxM</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Bidadi, H</creator><creator>Mohammadi Aref, S</creator><creator>Ghafouri, M</creator><creator>Parhizkar, M</creator><creator>Olad, A</creator><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><author>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_13726334093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Materials science</topic><topic>Nonlinearity</topic><topic>Semiconductors</topic><topic>Sintering</topic><topic>Varistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bidadi, H</creatorcontrib><creatorcontrib>Mohammadi Aref, S</creatorcontrib><creatorcontrib>Ghafouri, M</creatorcontrib><creatorcontrib>Parhizkar, M</creatorcontrib><creatorcontrib>Olad, A</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bidadi, H</au><au>Mohammadi Aref, S</au><au>Ghafouri, M</au><au>Parhizkar, M</au><au>Olad, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2013-06-01</date><risdate>2013</risdate><volume>16</volume><issue>3</issue><spage>752</spage><epage>758</epage><pages>752-758</pages><issn>1369-8001</issn><abstract>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 1369-8001
ispartof Materials science in semiconductor processing, 2013-06, Vol.16 (3), p.752-758
issn 1369-8001
language eng
recordid cdi_proquest_miscellaneous_1372633409
source Elsevier ScienceDirect Journals
subjects Electric potential
Electronic devices
Materials science
Nonlinearity
Semiconductors
Sintering
Varistors
Voltage
title The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T06%3A37%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effect%20of%20sintering%20temperature%20on%20varistor%20characteristics%20of%20gallium%20arsenideapolyanilineapolyethylene%20composite%20varistors&rft.jtitle=Materials%20science%20in%20semiconductor%20processing&rft.au=Bidadi,%20H&rft.date=2013-06-01&rft.volume=16&rft.issue=3&rft.spage=752&rft.epage=758&rft.pages=752-758&rft.issn=1369-8001&rft_id=info:doi/&rft_dat=%3Cproquest%3E1372633409%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1372633409&rft_id=info:pmid/&rfr_iscdi=true