The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors
GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is...
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Veröffentlicht in: | Materials science in semiconductor processing 2013-06, Vol.16 (3), p.752-758 |
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creator | Bidadi, H Mohammadi Aref, S Ghafouri, M Parhizkar, M Olad, A |
description | GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed. |
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fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1372633409</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1372633409</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_13726334093</originalsourceid><addsrcrecordid>eNqVjLtuAjEQRV0QKeTxD1PSIHlxsoQ6IuID6NHIuctO5LUXzywSXT49QkHpU51bnHtmbt6EdrN88765dw-qX97711XTzt33vgeh6xCNSkcq2VAlH8kwjKhsUwWVTGeuolYqxZ4rx6ukJlGvpyOnJNNAXBVZPsFjSRfOkiT_blh_ScigWIaxqBj-evrk7jpOiucbH93iY7t_3y3HWk4T1A6DaERKnFEmPTRhvWpDePGb8A_1B4s6VxM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1372633409</pqid></control><display><type>article</type><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><source>Elsevier ScienceDirect Journals</source><creator>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</creator><creatorcontrib>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</creatorcontrib><description>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</description><identifier>ISSN: 1369-8001</identifier><language>eng</language><subject>Electric potential ; Electronic devices ; Materials science ; Nonlinearity ; Semiconductors ; Sintering ; Varistors ; Voltage</subject><ispartof>Materials science in semiconductor processing, 2013-06, Vol.16 (3), p.752-758</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Bidadi, H</creatorcontrib><creatorcontrib>Mohammadi Aref, S</creatorcontrib><creatorcontrib>Ghafouri, M</creatorcontrib><creatorcontrib>Parhizkar, M</creatorcontrib><creatorcontrib>Olad, A</creatorcontrib><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><title>Materials science in semiconductor processing</title><description>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</description><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Materials science</subject><subject>Nonlinearity</subject><subject>Semiconductors</subject><subject>Sintering</subject><subject>Varistors</subject><subject>Voltage</subject><issn>1369-8001</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVjLtuAjEQRV0QKeTxD1PSIHlxsoQ6IuID6NHIuctO5LUXzywSXT49QkHpU51bnHtmbt6EdrN88765dw-qX97711XTzt33vgeh6xCNSkcq2VAlH8kwjKhsUwWVTGeuolYqxZ4rx6ukJlGvpyOnJNNAXBVZPsFjSRfOkiT_blh_ScigWIaxqBj-evrk7jpOiucbH93iY7t_3y3HWk4T1A6DaERKnFEmPTRhvWpDePGb8A_1B4s6VxM</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Bidadi, H</creator><creator>Mohammadi Aref, S</creator><creator>Ghafouri, M</creator><creator>Parhizkar, M</creator><creator>Olad, A</creator><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</title><author>Bidadi, H ; Mohammadi Aref, S ; Ghafouri, M ; Parhizkar, M ; Olad, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_13726334093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Materials science</topic><topic>Nonlinearity</topic><topic>Semiconductors</topic><topic>Sintering</topic><topic>Varistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bidadi, H</creatorcontrib><creatorcontrib>Mohammadi Aref, S</creatorcontrib><creatorcontrib>Ghafouri, M</creatorcontrib><creatorcontrib>Parhizkar, M</creatorcontrib><creatorcontrib>Olad, A</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bidadi, H</au><au>Mohammadi Aref, S</au><au>Ghafouri, M</au><au>Parhizkar, M</au><au>Olad, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2013-06-01</date><risdate>2013</risdate><volume>16</volume><issue>3</issue><spage>752</spage><epage>758</epage><pages>752-758</pages><issn>1369-8001</issn><abstract>GaAs-polymer composite varistors were prepared by hot pressing at a pressure of 60 MPa and different temperatures and their current-voltage characteristics were investigated. The results show that these varistors can be used to protect circuits from 46 V up to 54 V over voltages. In addition, it is found that the varistor breakdown voltage and its nonlinearity as well as its impurity band gap increase by increasing sintering temperature while the corresponding barrier height decreases. Each sample has hysteresis which decreases through the increase in sintering temperature. This causes the varistors to have longer lifetime due to their low degradation. Finally, the analysis of composite samples by scanning electron microscopy is presented and discussed.</abstract></addata></record> |
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subjects | Electric potential Electronic devices Materials science Nonlinearity Semiconductors Sintering Varistors Voltage |
title | The effect of sintering temperature on varistor characteristics of gallium arsenideapolyanilineapolyethylene composite varistors |
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