Crystallographic study on self-annealing of electroplated copper at room temperature

Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing o...

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Veröffentlicht in:Materials science in semiconductor processing 2013-06, Vol.16 (3), p.633-639
Hauptverfasser: Shinada, Eri, Nagoshi, Takashi, Chang, Tso-Fu Mark, Sone, Masato
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container_title Materials science in semiconductor processing
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creator Shinada, Eri
Nagoshi, Takashi
Chang, Tso-Fu Mark
Sone, Masato
description Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.
doi_str_mv 10.1016/j.mssp.2012.11.011
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1372632060</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1369800112002892</els_id><sourcerecordid>1372632060</sourcerecordid><originalsourceid>FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</originalsourceid><addsrcrecordid>eNp9kE9LJDEQxYMorM76BfaUi-Cle1PJmG7Biwz7D4S9uOdQna5ohnSnTTLCfPvNMINHD0VVwXuvqB9j30C0IEB_37ZTzksrBcgWoBUAZ-wS-k41a9HDeZ2Vvm96IeALu8p5K4S4k6Av2fMm7XPBEOJLwuXVW57LbtzzOPNMwTU4z4TBzy88Ok6BbElxCVho5DYuCyWOhacYJ15oqiuWXaKv7MJhyHR96iv27-eP583v5unvrz-bx6fGruV9adYkHeFIjjonxNhZ7bDDAaEf-64feilHGO5AdkL25BQOVakHlINWpEBJtWK3x9wlxbcd5WImny2FgDPFXTagOqmVFFpUqTxKbYo5J3JmSX7CtDcgzAGh2ZoDQnNAaABMRVhNN6d8zBaDSzhbnz-cslNaqVor9nDUUX323VMy2XqaLY0-VWJmjP6zM_8BQFyJnw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1372632060</pqid></control><display><type>article</type><title>Crystallographic study on self-annealing of electroplated copper at room temperature</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Shinada, Eri ; Nagoshi, Takashi ; Chang, Tso-Fu Mark ; Sone, Masato</creator><creatorcontrib>Shinada, Eri ; Nagoshi, Takashi ; Chang, Tso-Fu Mark ; Sone, Masato</creatorcontrib><description>Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</description><identifier>ISSN: 1369-8001</identifier><identifier>EISSN: 1873-4081</identifier><identifier>DOI: 10.1016/j.mssp.2012.11.011</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Annealing ; ANNEALING PROCESSES ; Applied sciences ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Copper ; Cross-disciplinary physics: materials science; rheology ; EBSD ; Electrodeposition, electroplating ; ELECTROPLATING ; Exact sciences and technology ; Grain growth ; Grains ; Heat treatment ; Materials science ; Metals. Metallurgy ; Methods of deposition of films and coatings; film growth and epitaxy ; Orientation ; Other heat and thermomechanical treatments ; Physics ; Production techniques ; Self-annealing ; SEMICONDUCTORS ; Sulfates ; Treatment of materials and its effects on microstructure and properties ; XRD</subject><ispartof>Materials science in semiconductor processing, 2013-06, Vol.16 (3), p.633-639</ispartof><rights>2012 Elsevier Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</citedby><cites>FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mssp.2012.11.011$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=27363336$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Shinada, Eri</creatorcontrib><creatorcontrib>Nagoshi, Takashi</creatorcontrib><creatorcontrib>Chang, Tso-Fu Mark</creatorcontrib><creatorcontrib>Sone, Masato</creatorcontrib><title>Crystallographic study on self-annealing of electroplated copper at room temperature</title><title>Materials science in semiconductor processing</title><description>Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</description><subject>Annealing</subject><subject>ANNEALING PROCESSES</subject><subject>Applied sciences</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>EBSD</subject><subject>Electrodeposition, electroplating</subject><subject>ELECTROPLATING</subject><subject>Exact sciences and technology</subject><subject>Grain growth</subject><subject>Grains</subject><subject>Heat treatment</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Orientation</subject><subject>Other heat and thermomechanical treatments</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Self-annealing</subject><subject>SEMICONDUCTORS</subject><subject>Sulfates</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><subject>XRD</subject><issn>1369-8001</issn><issn>1873-4081</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LJDEQxYMorM76BfaUi-Cle1PJmG7Biwz7D4S9uOdQna5ohnSnTTLCfPvNMINHD0VVwXuvqB9j30C0IEB_37ZTzksrBcgWoBUAZ-wS-k41a9HDeZ2Vvm96IeALu8p5K4S4k6Av2fMm7XPBEOJLwuXVW57LbtzzOPNMwTU4z4TBzy88Ok6BbElxCVho5DYuCyWOhacYJ15oqiuWXaKv7MJhyHR96iv27-eP583v5unvrz-bx6fGruV9adYkHeFIjjonxNhZ7bDDAaEf-64feilHGO5AdkL25BQOVakHlINWpEBJtWK3x9wlxbcd5WImny2FgDPFXTagOqmVFFpUqTxKbYo5J3JmSX7CtDcgzAGh2ZoDQnNAaABMRVhNN6d8zBaDSzhbnz-cslNaqVor9nDUUX323VMy2XqaLY0-VWJmjP6zM_8BQFyJnw</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Shinada, Eri</creator><creator>Nagoshi, Takashi</creator><creator>Chang, Tso-Fu Mark</creator><creator>Sone, Masato</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>Crystallographic study on self-annealing of electroplated copper at room temperature</title><author>Shinada, Eri ; Nagoshi, Takashi ; Chang, Tso-Fu Mark ; Sone, Masato</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>ANNEALING PROCESSES</topic><topic>Applied sciences</topic><topic>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</topic><topic>Copper</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>EBSD</topic><topic>Electrodeposition, electroplating</topic><topic>ELECTROPLATING</topic><topic>Exact sciences and technology</topic><topic>Grain growth</topic><topic>Grains</topic><topic>Heat treatment</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Orientation</topic><topic>Other heat and thermomechanical treatments</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Self-annealing</topic><topic>SEMICONDUCTORS</topic><topic>Sulfates</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shinada, Eri</creatorcontrib><creatorcontrib>Nagoshi, Takashi</creatorcontrib><creatorcontrib>Chang, Tso-Fu Mark</creatorcontrib><creatorcontrib>Sone, Masato</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shinada, Eri</au><au>Nagoshi, Takashi</au><au>Chang, Tso-Fu Mark</au><au>Sone, Masato</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallographic study on self-annealing of electroplated copper at room temperature</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2013-06-01</date><risdate>2013</risdate><volume>16</volume><issue>3</issue><spage>633</spage><epage>639</epage><pages>633-639</pages><issn>1369-8001</issn><eissn>1873-4081</eissn><abstract>Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.mssp.2012.11.011</doi><tpages>7</tpages></addata></record>
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source Elsevier ScienceDirect Journals Complete
subjects Annealing
ANNEALING PROCESSES
Applied sciences
Cold working, work hardening
annealing, quenching, tempering, recovery, and recrystallization
textures
Copper
Cross-disciplinary physics: materials science
rheology
EBSD
Electrodeposition, electroplating
ELECTROPLATING
Exact sciences and technology
Grain growth
Grains
Heat treatment
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Orientation
Other heat and thermomechanical treatments
Physics
Production techniques
Self-annealing
SEMICONDUCTORS
Sulfates
Treatment of materials and its effects on microstructure and properties
XRD
title Crystallographic study on self-annealing of electroplated copper at room temperature
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T07%3A37%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Crystallographic%20study%20on%20self-annealing%20of%20electroplated%20copper%20at%20room%20temperature&rft.jtitle=Materials%20science%20in%20semiconductor%20processing&rft.au=Shinada,%20Eri&rft.date=2013-06-01&rft.volume=16&rft.issue=3&rft.spage=633&rft.epage=639&rft.pages=633-639&rft.issn=1369-8001&rft.eissn=1873-4081&rft_id=info:doi/10.1016/j.mssp.2012.11.011&rft_dat=%3Cproquest_cross%3E1372632060%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1372632060&rft_id=info:pmid/&rft_els_id=S1369800112002892&rfr_iscdi=true