Crystallographic study on self-annealing of electroplated copper at room temperature
Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing o...
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Veröffentlicht in: | Materials science in semiconductor processing 2013-06, Vol.16 (3), p.633-639 |
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description | Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu. |
doi_str_mv | 10.1016/j.mssp.2012.11.011 |
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This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</description><identifier>ISSN: 1369-8001</identifier><identifier>EISSN: 1873-4081</identifier><identifier>DOI: 10.1016/j.mssp.2012.11.011</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Annealing ; ANNEALING PROCESSES ; Applied sciences ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Copper ; Cross-disciplinary physics: materials science; rheology ; EBSD ; Electrodeposition, electroplating ; ELECTROPLATING ; Exact sciences and technology ; Grain growth ; Grains ; Heat treatment ; Materials science ; Metals. Metallurgy ; Methods of deposition of films and coatings; film growth and epitaxy ; Orientation ; Other heat and thermomechanical treatments ; Physics ; Production techniques ; Self-annealing ; SEMICONDUCTORS ; Sulfates ; Treatment of materials and its effects on microstructure and properties ; XRD</subject><ispartof>Materials science in semiconductor processing, 2013-06, Vol.16 (3), p.633-639</ispartof><rights>2012 Elsevier Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</citedby><cites>FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mssp.2012.11.011$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27363336$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Shinada, Eri</creatorcontrib><creatorcontrib>Nagoshi, Takashi</creatorcontrib><creatorcontrib>Chang, Tso-Fu Mark</creatorcontrib><creatorcontrib>Sone, Masato</creatorcontrib><title>Crystallographic study on self-annealing of electroplated copper at room temperature</title><title>Materials science in semiconductor processing</title><description>Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</description><subject>Annealing</subject><subject>ANNEALING PROCESSES</subject><subject>Applied sciences</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>EBSD</subject><subject>Electrodeposition, electroplating</subject><subject>ELECTROPLATING</subject><subject>Exact sciences and technology</subject><subject>Grain growth</subject><subject>Grains</subject><subject>Heat treatment</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Orientation</subject><subject>Other heat and thermomechanical treatments</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Self-annealing</subject><subject>SEMICONDUCTORS</subject><subject>Sulfates</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><subject>XRD</subject><issn>1369-8001</issn><issn>1873-4081</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LJDEQxYMorM76BfaUi-Cle1PJmG7Biwz7D4S9uOdQna5ohnSnTTLCfPvNMINHD0VVwXuvqB9j30C0IEB_37ZTzksrBcgWoBUAZ-wS-k41a9HDeZ2Vvm96IeALu8p5K4S4k6Av2fMm7XPBEOJLwuXVW57LbtzzOPNMwTU4z4TBzy88Ok6BbElxCVho5DYuCyWOhacYJ15oqiuWXaKv7MJhyHR96iv27-eP583v5unvrz-bx6fGruV9adYkHeFIjjonxNhZ7bDDAaEf-64feilHGO5AdkL25BQOVakHlINWpEBJtWK3x9wlxbcd5WImny2FgDPFXTagOqmVFFpUqTxKbYo5J3JmSX7CtDcgzAGh2ZoDQnNAaABMRVhNN6d8zBaDSzhbnz-cslNaqVor9nDUUX323VMy2XqaLY0-VWJmjP6zM_8BQFyJnw</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Shinada, Eri</creator><creator>Nagoshi, Takashi</creator><creator>Chang, Tso-Fu Mark</creator><creator>Sone, Masato</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>Crystallographic study on self-annealing of electroplated copper at room temperature</title><author>Shinada, Eri ; Nagoshi, Takashi ; Chang, Tso-Fu Mark ; Sone, Masato</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-4e2feadefe7f00d7c6fa7aba18d878b822d1b5127028ef3abefe6ba2b63e31323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>ANNEALING PROCESSES</topic><topic>Applied sciences</topic><topic>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</topic><topic>Copper</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>EBSD</topic><topic>Electrodeposition, electroplating</topic><topic>ELECTROPLATING</topic><topic>Exact sciences and technology</topic><topic>Grain growth</topic><topic>Grains</topic><topic>Heat treatment</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Orientation</topic><topic>Other heat and thermomechanical treatments</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Self-annealing</topic><topic>SEMICONDUCTORS</topic><topic>Sulfates</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shinada, Eri</creatorcontrib><creatorcontrib>Nagoshi, Takashi</creatorcontrib><creatorcontrib>Chang, Tso-Fu Mark</creatorcontrib><creatorcontrib>Sone, Masato</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shinada, Eri</au><au>Nagoshi, Takashi</au><au>Chang, Tso-Fu Mark</au><au>Sone, Masato</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallographic study on self-annealing of electroplated copper at room temperature</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2013-06-01</date><risdate>2013</risdate><volume>16</volume><issue>3</issue><spage>633</spage><epage>639</epage><pages>633-639</pages><issn>1369-8001</issn><eissn>1873-4081</eissn><abstract>Self-annealing in electroplated Cu films is the dramatic evolution of the microstructure in electroplated Cu near room temperature, and it occurs during a transient period of hours following the electroplating process. This study discusses the change of grain size and orientation in self-annealing of Cu films electroplated by an additive-free sulfate bath using X-ray diffraction and electron backscatter diffraction techniques. We found that the self-annealing started at the interface between the substrate and the electroplated Cu film. Immediately after the electroplating process, orientation of the Cu grains in the region near the interface was similar to that of the substrate. This indicates that the grain growth was affected by the substrate. Then, grain growth and change in orientation of the electroplated Cu film at room temperature became independent from the orientation of the substrate. The electroplated Cu film had many high-angle-grain boundaries (HAGBs) before incubation, and the fraction of HAGBs reduced as incubation time increased. Self-annealed Cu grains in the electroplated Cu film had many multiple twins, which came from low stacking-fault energy of Cu.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.mssp.2012.11.011</doi><tpages>7</tpages></addata></record> |
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subjects | Annealing ANNEALING PROCESSES Applied sciences Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Copper Cross-disciplinary physics: materials science rheology EBSD Electrodeposition, electroplating ELECTROPLATING Exact sciences and technology Grain growth Grains Heat treatment Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Orientation Other heat and thermomechanical treatments Physics Production techniques Self-annealing SEMICONDUCTORS Sulfates Treatment of materials and its effects on microstructure and properties XRD |
title | Crystallographic study on self-annealing of electroplated copper at room temperature |
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