Improved Growth Behavior of Atomic-Layer-Deposited High‑k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

Improved Growth Behavior of Atomic-Layer-Deposited High‑k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with wate...

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Veröffentlicht in:ACS applied materials & interfaces 2013-06, Vol.5 (11), p.4739-4744
Hauptverfasser: Yang, Jaehyun, Kim, Sunkook, Choi, Woong, Park, Sang Han, Jung, Youngkwon, Cho, Mann-Ho, Kim, Hyoungsub
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container_end_page 4744
container_issue 11
container_start_page 4739
container_title ACS applied materials & interfaces
container_volume 5
creator Yang, Jaehyun
Kim, Sunkook
Choi, Woong
Park, Sang Han
Jung, Youngkwon
Cho, Mann-Ho
Kim, Hyoungsub
description We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.
doi_str_mv 10.1021/am303261c
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title Improved Growth Behavior of Atomic-Layer-Deposited High‑k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment
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