High-Performance InGaAs/InP Single-Photon Avalanche Photodiode

In 0.53 Ga 0.47 As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2007-07, Vol.13 (4), p.887-894
Hauptverfasser:	Mingguo Liu, Chong Hu, Xiaogang Bai, Xiangyi Guo, Campbell, J.C., Zhong Pan, Tashima, M.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Afterpulsing array Arrays Avalanche photodiodes Avalanches Counting Counting circuits Cryptography dark count rate (DCR) Dark current Diodes Indium gallium arsenide Indium gallium arsenides Indium phosphide Indium phosphides Optical pulses Optical receivers Photodiodes Quantum electronics single-photon detection efficiency (SPDE) Timing timing resolution
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In 0.53 Ga 0.47 As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP=4.5X 10 -17 W/Hz 1/2 W/Hz) at 200 K and 1.31 mum. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4X4 SPAD array are reported.
ISSN:	1077-260X 1558-4542
DOI:	10.1109/JSTQE.2007.903855