High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation
Large-area silicon PaiaN diodes (VRRM = 4.5 kV, IFAV a 3 kA, Aactive a 55 cm2) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to exist...
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| Veröffentlicht in: | Microelectronics and reliability 2013-05, Vol.53 (5), p.681-686 |
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| creator | Pina, L Vobecky, J |
| description | Large-area silicon PaiaN diodes (VRRM = 4.5 kV, IFAV a 3 kA, Aactive a 55 cm2) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degree C. |
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Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degree C.</description><identifier>ISSN: 0026-2714</identifier><language>eng</language><subject>Cathodes ; Deposition ; Diodes ; Dynamics ; Electron irradiation ; Recovery ; Silicon ; Softness</subject><ispartof>Microelectronics and reliability, 2013-05, Vol.53 (5), p.681-686</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786</link.rule.ids></links><search><creatorcontrib>Pina, L</creatorcontrib><creatorcontrib>Vobecky, J</creatorcontrib><title>High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation</title><title>Microelectronics and reliability</title><description>Large-area silicon PaiaN diodes (VRRM = 4.5 kV, IFAV a 3 kA, Aactive a 55 cm2) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degree C.</description><subject>Cathodes</subject><subject>Deposition</subject><subject>Diodes</subject><subject>Dynamics</subject><subject>Electron irradiation</subject><subject>Recovery</subject><subject>Silicon</subject><subject>Softness</subject><issn>0026-2714</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVi7sKAjEQAFMo-PyHLW0OEuOdYCvKVWJx2MqSW81KvJzZiL-vgj9gNQzMDNRY62VVLNdmNVITkZvWeq2NGatTzVdf9PFFCYQDu9jBERkP0HJsCV6cPTjM_iviY8qygcYT8L1HlyFegAK5nD4fp4QtY-bYzdTwgkFo_uNULfa7ZlsXfYqPJ0k-31kchYAdxaecja1KU5a2svaP9A0ch0Rk</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Pina, L</creator><creator>Vobecky, J</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation</title><author>Pina, L ; Vobecky, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_13651553633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Cathodes</topic><topic>Deposition</topic><topic>Diodes</topic><topic>Dynamics</topic><topic>Electron irradiation</topic><topic>Recovery</topic><topic>Silicon</topic><topic>Softness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pina, L</creatorcontrib><creatorcontrib>Vobecky, J</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pina, L</au><au>Vobecky, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation</atitle><jtitle>Microelectronics and reliability</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>53</volume><issue>5</issue><spage>681</spage><epage>686</epage><pages>681-686</pages><issn>0026-2714</issn><abstract>Large-area silicon PaiaN diodes (VRRM = 4.5 kV, IFAV a 3 kA, Aactive a 55 cm2) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degree C.</abstract></addata></record> |
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| ispartof | Microelectronics and reliability, 2013-05, Vol.53 (5), p.681-686 |
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| subjects | Cathodes Deposition Diodes Dynamics Electron irradiation Recovery Silicon Softness |
| title | High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation |
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