Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers

► GeOI substrates with thin Al2O3/SiO2 hybrid BOX layers are successfully fabricated. ► Bonding interface was robust even after bonding at room temperature in atmosphere. ► Dit of as low as 3.9×1011eV−1cm−2 at the GeOI/BOX was obtained. Fabrication of bonded Germanium on insulator (GeOI) substrates...

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Veröffentlicht in:	Solid-state electronics 2013-05, Vol.83, p.42-45
Hauptverfasser:	Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesive bonding Al2O3 Aluminum oxide Applied sciences Bonding Density Electronics Exact sciences and technology Germanium Germanium on insulator Interface state density Mechanical polishing Microelectronic fabrication (materials and surfaces technology) Oxides Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon dioxide Ultra-thin BOX Wafer bonding
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