Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance

Root mean square (RMS) Schottky barrier diode (SBD) detectors with detector gain of 4.6 V -1 , operating frequency range around 30-50 GHz or bandwidth greater than 20 GHz, and an area of 36 μm 2 are demonstrated in 45-nm SOI CMOS. The maximum detector insertion loss up to 50 GHz is 0.1 dB relative t...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2012-10, Vol.47 (10), p.2335-2343
Hauptverfasser:	Chikuang Yu, Chieh-Lin Wu, Kshattry, S., Yang-Hun Yun, Choong-Yul Cha, Shichijo, H., O, Kenneth K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Built-in self-test Circuit properties Design. Technologies. Operation analysis. Testing Detectors Diodes Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain High impedance Impedance Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Millimeter wave measurements millimeter wave mixer Millimeter waves Mixers Nanostructure Noise RMS detector Schottky diode Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors SOI CMOS Voltage measurement
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