Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure
► The large-scale uniform SnO2:F film was prepared by APCVD on an industrial line. ► The SnO2:F film presented a micro-nano structure. ► The film showed uniform morphology and stable functional property under 580°C. ► ‘H’ factor was defined to quantify the structural influence on the low-e property....
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container_title | Journal of alloys and compounds |
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creator | Gao, Q. Li, M. Li, X. Liu, Y. Song, C.L. Wang, J.X. Liu, Q.Y. Liu, J.B. Han, G.R. |
description | ► The large-scale uniform SnO2:F film was prepared by APCVD on an industrial line. ► The SnO2:F film presented a micro-nano structure. ► The film showed uniform morphology and stable functional property under 580°C. ► ‘H’ factor was defined to quantify the structural influence on the low-e property.
The large-scale homogeneous fluorine-doped tin oxide (SnO2:F) thin film was successfully deposited on glass by atmospheric pressure chemical vapor deposition (APCVD) method on an industrial production line. XRD, SEM and TEM were employed to investigate the film morphological and microstructural variation. It was observed for the first time that the as-deposited SnO2:F thin film presented a typical micro-nano structure, of which the micro-sized grains (100–300nm) were assembled by nano-sized crystallites ( |
doi_str_mv | 10.1016/j.jallcom.2012.09.119 |
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The large-scale homogeneous fluorine-doped tin oxide (SnO2:F) thin film was successfully deposited on glass by atmospheric pressure chemical vapor deposition (APCVD) method on an industrial production line. XRD, SEM and TEM were employed to investigate the film morphological and microstructural variation. It was observed for the first time that the as-deposited SnO2:F thin film presented a typical micro-nano structure, of which the micro-sized grains (100–300nm) were assembled by nano-sized crystallites (<10nm). It was found that the post-heating for 20min at ∼580°C or above induced splitting phenomenon of the micro-sized polyhedron-like grains into the smaller ones. Meanwhile, the increased grain boundaries due to such process were found to lead a dramatic decrease in the Hall mobility and distinguishable increase in the sheet resistance. Therefore, it was confirmed that such large-scale low-emission glass can serve with good functional properties below 580°C.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2012.09.119</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Fluorine-doped tin oxide ; Glass ; Grain boundaries ; Grains ; Homogeneous ; Low-emission glass ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Micro-nano structure ; Microstructure ; Nanostructure ; Other inorganic semiconductors ; Physics ; Stability ; Thin films ; Tin dioxide ; Tin oxides</subject><ispartof>Journal of alloys and compounds, 2013-02, Vol.550, p.144-149</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-f49431de3ce72a00f09209523fa67ac29b8f4ee97b469c14ad4023d4da00f4b53</citedby><cites>FETCH-LOGICAL-c372t-f49431de3ce72a00f09209523fa67ac29b8f4ee97b469c14ad4023d4da00f4b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2012.09.119$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27929,27930,46000</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27112843$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gao, Q.</creatorcontrib><creatorcontrib>Li, M.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Liu, Y.</creatorcontrib><creatorcontrib>Song, C.L.</creatorcontrib><creatorcontrib>Wang, J.X.</creatorcontrib><creatorcontrib>Liu, Q.Y.</creatorcontrib><creatorcontrib>Liu, J.B.</creatorcontrib><creatorcontrib>Han, G.R.</creatorcontrib><title>Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure</title><title>Journal of alloys and compounds</title><description>► The large-scale uniform SnO2:F film was prepared by APCVD on an industrial line. ► The SnO2:F film presented a micro-nano structure. ► The film showed uniform morphology and stable functional property under 580°C. ► ‘H’ factor was defined to quantify the structural influence on the low-e property.
The large-scale homogeneous fluorine-doped tin oxide (SnO2:F) thin film was successfully deposited on glass by atmospheric pressure chemical vapor deposition (APCVD) method on an industrial production line. XRD, SEM and TEM were employed to investigate the film morphological and microstructural variation. It was observed for the first time that the as-deposited SnO2:F thin film presented a typical micro-nano structure, of which the micro-sized grains (100–300nm) were assembled by nano-sized crystallites (<10nm). It was found that the post-heating for 20min at ∼580°C or above induced splitting phenomenon of the micro-sized polyhedron-like grains into the smaller ones. Meanwhile, the increased grain boundaries due to such process were found to lead a dramatic decrease in the Hall mobility and distinguishable increase in the sheet resistance. Therefore, it was confirmed that such large-scale low-emission glass can serve with good functional properties below 580°C.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Fluorine-doped tin oxide</subject><subject>Glass</subject><subject>Grain boundaries</subject><subject>Grains</subject><subject>Homogeneous</subject><subject>Low-emission glass</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Micro-nano structure</subject><subject>Microstructure</subject><subject>Nanostructure</subject><subject>Other inorganic semiconductors</subject><subject>Physics</subject><subject>Stability</subject><subject>Thin films</subject><subject>Tin dioxide</subject><subject>Tin oxides</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkEtr3TAQRkVpIbdpf0JAm0I3djSS_FA3pYTmAQlZJF0LWR41ushyKskt-fe1ubfdZjUMnPlm5hByBqwGBu35vt6bEOw81ZwBr5mqAdQbsoO-E5VsW_WW7JjiTdWLvj8h73PeM8ZACdiR4c7bNOeSFluWZAI1caRuibb4Oa5tLmbwwZcXOjsaTPqJVbYmIH2I9_zLJS1PPlLnw0T_-PJEpy2tiibO9F8mfiDvnAkZPx7rKflx-f3x4rq6vb-6ufh2W1nR8VI5qaSAEYXFjhvG3HoyUw0XzrSdsVwNvZOIqhtkqyxIM0rGxSjHjZVDI07J50Puc5p_LZiLnny2GIKJOC9Zg2gb4NA0G9oc0O33nNDp5-Qnk140ML051Xt9dKo3p5opvTpd5z4dV5jNgksmWp__D_MOgPdSrNzXA4frv789Jp2tx2hx9Alt0ePsX9n0F5llkHE</recordid><startdate>20130215</startdate><enddate>20130215</enddate><creator>Gao, Q.</creator><creator>Li, M.</creator><creator>Li, X.</creator><creator>Liu, Y.</creator><creator>Song, C.L.</creator><creator>Wang, J.X.</creator><creator>Liu, Q.Y.</creator><creator>Liu, J.B.</creator><creator>Han, G.R.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130215</creationdate><title>Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure</title><author>Gao, Q. ; Li, M. ; Li, X. ; Liu, Y. ; Song, C.L. ; Wang, J.X. ; Liu, Q.Y. ; Liu, J.B. ; Han, G.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-f49431de3ce72a00f09209523fa67ac29b8f4ee97b469c14ad4023d4da00f4b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Fluorine-doped tin oxide</topic><topic>Glass</topic><topic>Grain boundaries</topic><topic>Grains</topic><topic>Homogeneous</topic><topic>Low-emission glass</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Micro-nano structure</topic><topic>Microstructure</topic><topic>Nanostructure</topic><topic>Other inorganic semiconductors</topic><topic>Physics</topic><topic>Stability</topic><topic>Thin films</topic><topic>Tin dioxide</topic><topic>Tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Q.</creatorcontrib><creatorcontrib>Li, M.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Liu, Y.</creatorcontrib><creatorcontrib>Song, C.L.</creatorcontrib><creatorcontrib>Wang, J.X.</creatorcontrib><creatorcontrib>Liu, Q.Y.</creatorcontrib><creatorcontrib>Liu, J.B.</creatorcontrib><creatorcontrib>Han, G.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Q.</au><au>Li, M.</au><au>Li, X.</au><au>Liu, Y.</au><au>Song, C.L.</au><au>Wang, J.X.</au><au>Liu, Q.Y.</au><au>Liu, J.B.</au><au>Han, G.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2013-02-15</date><risdate>2013</risdate><volume>550</volume><spage>144</spage><epage>149</epage><pages>144-149</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► The large-scale uniform SnO2:F film was prepared by APCVD on an industrial line. ► The SnO2:F film presented a micro-nano structure. ► The film showed uniform morphology and stable functional property under 580°C. ► ‘H’ factor was defined to quantify the structural influence on the low-e property.
The large-scale homogeneous fluorine-doped tin oxide (SnO2:F) thin film was successfully deposited on glass by atmospheric pressure chemical vapor deposition (APCVD) method on an industrial production line. XRD, SEM and TEM were employed to investigate the film morphological and microstructural variation. It was observed for the first time that the as-deposited SnO2:F thin film presented a typical micro-nano structure, of which the micro-sized grains (100–300nm) were assembled by nano-sized crystallites (<10nm). It was found that the post-heating for 20min at ∼580°C or above induced splitting phenomenon of the micro-sized polyhedron-like grains into the smaller ones. Meanwhile, the increased grain boundaries due to such process were found to lead a dramatic decrease in the Hall mobility and distinguishable increase in the sheet resistance. Therefore, it was confirmed that such large-scale low-emission glass can serve with good functional properties below 580°C.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2012.09.119</doi><tpages>6</tpages></addata></record> |
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subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fluorine-doped tin oxide Glass Grain boundaries Grains Homogeneous Low-emission glass Materials science Methods of deposition of films and coatings film growth and epitaxy Micro-nano structure Microstructure Nanostructure Other inorganic semiconductors Physics Stability Thin films Tin dioxide Tin oxides |
title | Microstructural and functional stability of large-scale SnO2:F thin film with micro-nano structure |
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