Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition
► LCMO was introduced to promote the crystalline and growth of BNBMT film. ► Large remnant polarization (∼20μC/cm2) comparable to the bulk one was obtained. ► Low dielectric loss was obtained. Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3 (BNBMT) thin film with a composition near the morphotropic phase...
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| Veröffentlicht in: | Journal of alloys and compounds 2013-03, Vol.553, p.142-145 |
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| container_title | Journal of alloys and compounds |
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| creator | Jin, C.C. Wang, F.F. Yao, Q.R. Tang, Y.X. Wang, T. Shi, W.Z. |
| description | ► LCMO was introduced to promote the crystalline and growth of BNBMT film. ► Large remnant polarization (∼20μC/cm2) comparable to the bulk one was obtained. ► Low dielectric loss was obtained.
Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3 (BNBMT) thin film with a composition near the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. It was found that the presence of a buffer layer of (La0.7Ca0.3)MnO3 promoted growth of (110)-oriented thin film instead of (100) one. Enhanced ferroelectric properties were obtained for the bilayered film, with remnant polarization Pr of ∼20μC/cm2 and coercive field Ec of ∼10.2kV/mm. Dielectric loss was about 0.10 between 100Hz and 100kHz. The enhanced electrical properties exhibit potential in environmental-friendly ferroelectric devices. |
| doi_str_mv | 10.1016/j.jallcom.2012.11.095 |
| format | Article |
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Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3 (BNBMT) thin film with a composition near the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. It was found that the presence of a buffer layer of (La0.7Ca0.3)MnO3 promoted growth of (110)-oriented thin film instead of (100) one. Enhanced ferroelectric properties were obtained for the bilayered film, with remnant polarization Pr of ∼20μC/cm2 and coercive field Ec of ∼10.2kV/mm. Dielectric loss was about 0.10 between 100Hz and 100kHz. The enhanced electrical properties exhibit potential in environmental-friendly ferroelectric devices.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2012.11.095</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Coercive force ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Devices ; Dielectric loss ; Dielectric loss and relaxation ; Dielectric properties of solids and liquids ; Dielectric response ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Ferroelectric materials ; Ferroelectricity ; Ferroelectricity and antiferroelectricity ; Ferroelectrics ; Laser processing ; Phase boundaries ; Physics ; Pulsed laser deposition ; Thin film ; Thin films</subject><ispartof>Journal of alloys and compounds, 2013-03, Vol.553, p.142-145</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-19747b763c1a2260cc891de25de84d79e1968be93e7f6490a65a38cf0e7dbdb33</citedby><cites>FETCH-LOGICAL-c372t-19747b763c1a2260cc891de25de84d79e1968be93e7f6490a65a38cf0e7dbdb33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2012.11.095$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27113677$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jin, C.C.</creatorcontrib><creatorcontrib>Wang, F.F.</creatorcontrib><creatorcontrib>Yao, Q.R.</creatorcontrib><creatorcontrib>Tang, Y.X.</creatorcontrib><creatorcontrib>Wang, T.</creatorcontrib><creatorcontrib>Shi, W.Z.</creatorcontrib><title>Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition</title><title>Journal of alloys and compounds</title><description>► LCMO was introduced to promote the crystalline and growth of BNBMT film. ► Large remnant polarization (∼20μC/cm2) comparable to the bulk one was obtained. ► Low dielectric loss was obtained.
Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3 (BNBMT) thin film with a composition near the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. It was found that the presence of a buffer layer of (La0.7Ca0.3)MnO3 promoted growth of (110)-oriented thin film instead of (100) one. Enhanced ferroelectric properties were obtained for the bilayered film, with remnant polarization Pr of ∼20μC/cm2 and coercive field Ec of ∼10.2kV/mm. Dielectric loss was about 0.10 between 100Hz and 100kHz. The enhanced electrical properties exhibit potential in environmental-friendly ferroelectric devices.</description><subject>Coercive force</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Devices</subject><subject>Dielectric loss</subject><subject>Dielectric loss and relaxation</subject><subject>Dielectric properties of solids and liquids</subject><subject>Dielectric response</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Ferroelectricity and antiferroelectricity</subject><subject>Ferroelectrics</subject><subject>Laser processing</subject><subject>Phase boundaries</subject><subject>Physics</subject><subject>Pulsed laser deposition</subject><subject>Thin film</subject><subject>Thin films</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkcGOFCEQhonRxHH1EUy4mMweuqVgGpqT0cnqbjK6l_VMaCiyTJjuFnpM9jl8YRlnslcvEOr__6oUHyHvgbXAQH7ct3ubkpsOLWfAW4CW6e4FWUGvRLORUr8kK6Z51_Si71-TN6XsGWOgBazIn5vx0Y4OPQ2Y84QJ3ZKjo3b01Mfn55ynGfMSsdA40vXOslZt6yGuv4_3ohmOocZrk_WXyNruR1W664d4Umyp5YTWNyEj0uWx5kNMBzo80fmY_qnVk6nHeSpxidP4lrwKtirvLvcV-fn15mF72-zuv91tP-8aJxRfGtBqowYlhQPLuWTO9Ro88s5jv_FKI2jZD6gFqiA3mlnZWdG7wFD5wQ9CXJH1uW_d7tcRy2IOsThMyY44HYsBITvgAFJWa3e2ujyVkjGYOceDzU8GmDlBMHtzgWBOEAyAqRBq7sNlhC3OppDrX8fyHOYK6hClqu_T2Yd1398Rsyku4olLzBWB8VP8z6S_Uiue3g</recordid><startdate>20130315</startdate><enddate>20130315</enddate><creator>Jin, C.C.</creator><creator>Wang, F.F.</creator><creator>Yao, Q.R.</creator><creator>Tang, Y.X.</creator><creator>Wang, T.</creator><creator>Shi, W.Z.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130315</creationdate><title>Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition</title><author>Jin, C.C. ; Wang, F.F. ; Yao, Q.R. ; Tang, Y.X. ; Wang, T. ; Shi, W.Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-19747b763c1a2260cc891de25de84d79e1968be93e7f6490a65a38cf0e7dbdb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Coercive force</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Devices</topic><topic>Dielectric loss</topic><topic>Dielectric loss and relaxation</topic><topic>Dielectric properties of solids and liquids</topic><topic>Dielectric response</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Ferroelectricity and antiferroelectricity</topic><topic>Ferroelectrics</topic><topic>Laser processing</topic><topic>Phase boundaries</topic><topic>Physics</topic><topic>Pulsed laser deposition</topic><topic>Thin film</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jin, C.C.</creatorcontrib><creatorcontrib>Wang, F.F.</creatorcontrib><creatorcontrib>Yao, Q.R.</creatorcontrib><creatorcontrib>Tang, Y.X.</creatorcontrib><creatorcontrib>Wang, T.</creatorcontrib><creatorcontrib>Shi, W.Z.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jin, C.C.</au><au>Wang, F.F.</au><au>Yao, Q.R.</au><au>Tang, Y.X.</au><au>Wang, T.</au><au>Shi, W.Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2013-03-15</date><risdate>2013</risdate><volume>553</volume><spage>142</spage><epage>145</epage><pages>142-145</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► LCMO was introduced to promote the crystalline and growth of BNBMT film. ► Large remnant polarization (∼20μC/cm2) comparable to the bulk one was obtained. ► Low dielectric loss was obtained.
Mn-doped 0.935(Bi0.5Na0.5)TiO3–0.065BaTiO3 (BNBMT) thin film with a composition near the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by using pulsed laser deposition. It was found that the presence of a buffer layer of (La0.7Ca0.3)MnO3 promoted growth of (110)-oriented thin film instead of (100) one. Enhanced ferroelectric properties were obtained for the bilayered film, with remnant polarization Pr of ∼20μC/cm2 and coercive field Ec of ∼10.2kV/mm. Dielectric loss was about 0.10 between 100Hz and 100kHz. The enhanced electrical properties exhibit potential in environmental-friendly ferroelectric devices.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2012.11.095</doi><tpages>4</tpages></addata></record> |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Coercive force Condensed matter: electronic structure, electrical, magnetic, and optical properties Devices Dielectric loss Dielectric loss and relaxation Dielectric properties of solids and liquids Dielectric response Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Ferroelectric materials Ferroelectricity Ferroelectricity and antiferroelectricity Ferroelectrics Laser processing Phase boundaries Physics Pulsed laser deposition Thin film Thin films |
| title | Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition |
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