Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond
We conducted a repetitive process for tiling freestanding substrates made from one identical seed crystal. After the mechanical polishing of both sides of the tiled substrates over the inch-sized area, the boundaries between the constituent substrates were barely recognized. By repeating the tiling...
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| Veröffentlicht in: | Diamond and related materials 2013-03, Vol.33, p.27-31 |
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| container_title | Diamond and related materials |
| container_volume | 33 |
| creator | Yamada, Hideaki Chayahara, Akiyoshi Mokuno, Yoshiaki Tsubouchi, Nobuteru Shikata, Shin-ichi |
| description | We conducted a repetitive process for tiling freestanding substrates made from one identical seed crystal. After the mechanical polishing of both sides of the tiled substrates over the inch-sized area, the boundaries between the constituent substrates were barely recognized. By repeating the tiling process, we succeeded in fabricating several freestanding wafers with a size of 1.5in. (area of approximately 20×40mm2). For this wafer size range, we found that non-uniformities in the morphology, as well as the growth rate, became remarkable. By qualitative comparison between the numerical predictions and the experimental observations, we discussed the dominant factors that control the non-uniformity.
► Inch size wafers of single-crystal diamond are fabricated. ► Such large size wafers are processed to enlarge the wafer size moreover. ► Finally, 1.5inch size freestanding wafers are fabricated. ► Possible reasons of non-uniformity in impurity concentration are discussed. |
| doi_str_mv | 10.1016/j.diamond.2012.12.012 |
| format | Article |
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► Inch size wafers of single-crystal diamond are fabricated. ► Such large size wafers are processed to enlarge the wafer size moreover. ► Finally, 1.5inch size freestanding wafers are fabricated. ► Possible reasons of non-uniformity in impurity concentration are discussed.</description><subject>Boundaries</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystals</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Lift-off processing</subject><subject>Materials science</subject><subject>Mechanical polishing</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microwave plasma CVD</subject><subject>Mosaic wafers</subject><subject>Numerical prediction</subject><subject>Physics</subject><subject>Recognition</subject><subject>Seeds</subject><subject>Simulation</subject><subject>Single-crystal diamond</subject><subject>Specific materials</subject><subject>Theory and models of film growth</subject><subject>Tiling</subject><subject>Wafers</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE9rGzEQxUVooK6bj1DQJdDLOvqz0u6eSglNGgj00lxyEdrRyJZZS660bkg-fWRsei08eDD8ZubNEPKFsxVnXN9sVy7YXYpuJRgXq6pqF2TB-25oGNPiA1mwQahm0FJ9JJ9K2bJKDC1fkOenGHzKO7rO6WXeUBsdzbhHO9txQurtmAPYOaRIk6chwqYp4Q0dfbEeczkWLS0hridsIL-W2U70nOYzufR2Knh19iV5uvvx-_Zn8_jr_uH2-2MDreznZhTaYedaJvqWC8uGVncdMOjGXikFnccqLsZWa-ldL1F64KDA6VZyRJRL8vU0d5_TnwOW2exCAZwmGzEdiuFSK861lLyi6oRCTqVk9Gafw87mV8OZOf7SbM05vTn-0lRVq33X5xW2gJ18thFC-dcsOq76oWOV-3bisN77N2A2BQJGQBcywmxcCv_Z9A40No1k</recordid><startdate>20130301</startdate><enddate>20130301</enddate><creator>Yamada, Hideaki</creator><creator>Chayahara, Akiyoshi</creator><creator>Mokuno, Yoshiaki</creator><creator>Tsubouchi, Nobuteru</creator><creator>Shikata, Shin-ichi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20130301</creationdate><title>Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond</title><author>Yamada, Hideaki ; Chayahara, Akiyoshi ; Mokuno, Yoshiaki ; Tsubouchi, Nobuteru ; Shikata, Shin-ichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c438t-b26de7d4028412a094677c0c7b8555c7fe7fe12b4663fd83e3fc1c5cd6431eee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Boundaries</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystals</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Lift-off processing</topic><topic>Materials science</topic><topic>Mechanical polishing</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microwave plasma CVD</topic><topic>Mosaic wafers</topic><topic>Numerical prediction</topic><topic>Physics</topic><topic>Recognition</topic><topic>Seeds</topic><topic>Simulation</topic><topic>Single-crystal diamond</topic><topic>Specific materials</topic><topic>Theory and models of film growth</topic><topic>Tiling</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamada, Hideaki</creatorcontrib><creatorcontrib>Chayahara, Akiyoshi</creatorcontrib><creatorcontrib>Mokuno, Yoshiaki</creatorcontrib><creatorcontrib>Tsubouchi, Nobuteru</creatorcontrib><creatorcontrib>Shikata, Shin-ichi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamada, Hideaki</au><au>Chayahara, Akiyoshi</au><au>Mokuno, Yoshiaki</au><au>Tsubouchi, Nobuteru</au><au>Shikata, Shin-ichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond</atitle><jtitle>Diamond and related materials</jtitle><date>2013-03-01</date><risdate>2013</risdate><volume>33</volume><spage>27</spage><epage>31</epage><pages>27-31</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>We conducted a repetitive process for tiling freestanding substrates made from one identical seed crystal. After the mechanical polishing of both sides of the tiled substrates over the inch-sized area, the boundaries between the constituent substrates were barely recognized. By repeating the tiling process, we succeeded in fabricating several freestanding wafers with a size of 1.5in. (area of approximately 20×40mm2). For this wafer size range, we found that non-uniformities in the morphology, as well as the growth rate, became remarkable. By qualitative comparison between the numerical predictions and the experimental observations, we discussed the dominant factors that control the non-uniformity.
► Inch size wafers of single-crystal diamond are fabricated. ► Such large size wafers are processed to enlarge the wafer size moreover. ► Finally, 1.5inch size freestanding wafers are fabricated. ► Possible reasons of non-uniformity in impurity concentration are discussed.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2012.12.012</doi><tpages>5</tpages></addata></record> |
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| ispartof | Diamond and related materials, 2013-03, Vol.33, p.27-31 |
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| subjects | Boundaries Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Crystals Exact sciences and technology Fullerenes and related materials diamonds, graphite Lift-off processing Materials science Mechanical polishing Methods of deposition of films and coatings film growth and epitaxy Microwave plasma CVD Mosaic wafers Numerical prediction Physics Recognition Seeds Simulation Single-crystal diamond Specific materials Theory and models of film growth Tiling Wafers |
| title | Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond |
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