Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm2 V–1 s–1 at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. I...

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Veröffentlicht in:	ACS nano 2013-05, Vol.7 (5), p.4449-4458
Hauptverfasser:	Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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