Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm2 V–1 s–1 at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. I...

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Veröffentlicht in:ACS nano 2013-05, Vol.7 (5), p.4449-4458
Hauptverfasser: Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian
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container_issue 5
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container_title ACS nano
container_volume 7
creator Perera, Meeghage Madusanka
Lin, Ming-Wei
Chuang, Hsun-Jen
Chamlagain, Bhim Prasad
Wang, Chongyu
Tan, Xuebin
Cheng, Mark Ming-Cheng
Tománek, David
Zhou, Zhixian
description We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm2 V–1 s–1 at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈100 cm2 V–1 s–1 at 180 K to ≈220 cm2 V–1 s–1 at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >107 (104) for electrons (holes), and a near ideal subthreshold swing of ≈50 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer.
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