Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure
We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed t...
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| Veröffentlicht in: | Nano letters 2013-05, Vol.13 (5), p.2104-2109 |
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| container_end_page | 2109 |
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| container_title | Nano letters |
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| creator | An, Yong Q Nelson, Florence Lee, Ji Ung Diebold, Alain C |
| description | We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface. |
| doi_str_mv | 10.1021/nl4004514 |
| format | Article |
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Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl4004514</identifier><identifier>PMID: 23581964</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Specific materials</subject><ispartof>Nano letters, 2013-05, Vol.13 (5), p.2104-2109</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl4004514$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl4004514$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27075,27923,27924,56737,56787</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27439315$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23581964$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>An, Yong Q</creatorcontrib><creatorcontrib>Nelson, Florence</creatorcontrib><creatorcontrib>Lee, Ji Ung</creatorcontrib><creatorcontrib>Diebold, Alain C</creatorcontrib><title>Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.</description><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Physics</subject><subject>Specific materials</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkT1PwzAQhi0EolAY-AMoC1IZQs92vjxCVVqkSh0Kc3RxbNVV4gQ7Gfj3GFHKcnfDcyfd8xJyR-GJAqNz2yQASUqTM3JFUw5xJgQ7P81FMiHX3h8AQPAULsmE8bSgIkuuiFzaPVqp6mjbD0ZiE-2U7Gwdr9G1nTUyWimrHA6ms5F2XRsNexUtRueUHeIXgz6srhz2-4DNd2bLQpkB0MdoN7hRDqNTN-RCY-PV7bFPycfr8n2xjjfb1dvieRMj5_kQa9RSSiyKVFFRUYZMQVGoXAumK4YZ43mdMSEA8lzmNdQFAykLlJpmFSacT8ns927vus9R-aFsjZeqadCqbvQl5YnIg6c0C-j9ER2rVtVl70yL7qv8ExOAhyOAPljRLkgy_p_LEy548HviUPry0I3Ohg9LCuVPMOUpGP4NtY57nQ</recordid><startdate>20130508</startdate><enddate>20130508</enddate><creator>An, Yong Q</creator><creator>Nelson, Florence</creator><creator>Lee, Ji Ung</creator><creator>Diebold, Alain C</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130508</creationdate><title>Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure</title><author>An, Yong Q ; Nelson, Florence ; Lee, Ji Ung ; Diebold, Alain C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a337t-fafccca885e19b12a2e088e7f92fb2a6237d62990077c7d0d820cc8acf16ba433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Physics</topic><topic>Specific materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>An, Yong Q</creatorcontrib><creatorcontrib>Nelson, Florence</creatorcontrib><creatorcontrib>Lee, Ji Ung</creatorcontrib><creatorcontrib>Diebold, Alain C</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>An, Yong Q</au><au>Nelson, Florence</au><au>Lee, Ji Ung</au><au>Diebold, Alain C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-05-08</date><risdate>2013</risdate><volume>13</volume><issue>5</issue><spage>2104</spage><epage>2109</epage><pages>2104-2109</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23581964</pmid><doi>10.1021/nl4004514</doi><tpages>6</tpages></addata></record> |
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| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Specific materials |
| title | Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure |
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