Large-scale organic nanowire lithography and electronics
Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and thei...
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| Veröffentlicht in: | Nature communications 2013-04, Vol.4 (1), p.1773-1773, Article 1773 |
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| container_title | Nature communications |
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| creator | Min, Sung-Yong Kim, Tae-Sik Kim, Beom Joon Cho, Himchan Noh, Yong-Young Yang, Hoichang Cho, Jeong Ho Lee, Tae-Woo |
| description | Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm
2
V
−1
s
−1
with extremely low contact resistance ( |
| doi_str_mv | 10.1038/ncomms2785 |
| format | Article |
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2
V
−1
s
−1
with extremely low contact resistance (<5.53 Ω cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned
p
-type and
n
-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.
The high-speed, large-area printing of aligned semiconducting nanowires is vital for practical device applications. Here, the authors use a high-speed printing technique to print semiconducting nanowire arrays onto device substrates with precise nanowire control, and high field-effect mobilities are observed.</description><identifier>ISSN: 2041-1723</identifier><identifier>EISSN: 2041-1723</identifier><identifier>DOI: 10.1038/ncomms2785</identifier><identifier>PMID: 23653185</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/301/119/995 ; 639/624/1107/1109 ; 639/925/357/1016 ; Humanities and Social Sciences ; multidisciplinary ; Science ; Science (multidisciplinary)</subject><ispartof>Nature communications, 2013-04, Vol.4 (1), p.1773-1773, Article 1773</ispartof><rights>Springer Nature Limited 2013</rights><rights>Copyright Nature Publishing Group Apr 2013</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-535a837dabb1955be0ea935c393c7fd3cafbb3bcf005bba0e0f6ff438f5055cc3</citedby><cites>FETCH-LOGICAL-c453t-535a837dabb1955be0ea935c393c7fd3cafbb3bcf005bba0e0f6ff438f5055cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1038/ncomms2785$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://doi.org/10.1038/ncomms2785$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41096,42165,51551</link.rule.ids><linktorsrc>$$Uhttps://doi.org/10.1038/ncomms2785$$EView_record_in_Springer_Nature$$FView_record_in_$$GSpringer_Nature</linktorsrc><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23653185$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Min, Sung-Yong</creatorcontrib><creatorcontrib>Kim, Tae-Sik</creatorcontrib><creatorcontrib>Kim, Beom Joon</creatorcontrib><creatorcontrib>Cho, Himchan</creatorcontrib><creatorcontrib>Noh, Yong-Young</creatorcontrib><creatorcontrib>Yang, Hoichang</creatorcontrib><creatorcontrib>Cho, Jeong Ho</creatorcontrib><creatorcontrib>Lee, Tae-Woo</creatorcontrib><title>Large-scale organic nanowire lithography and electronics</title><title>Nature communications</title><addtitle>Nat Commun</addtitle><addtitle>Nat Commun</addtitle><description>Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm
2
V
−1
s
−1
with extremely low contact resistance (<5.53 Ω cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned
p
-type and
n
-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.
The high-speed, large-area printing of aligned semiconducting nanowires is vital for practical device applications. 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High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm
2
V
−1
s
−1
with extremely low contact resistance (<5.53 Ω cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned
p
-type and
n
-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.
The high-speed, large-area printing of aligned semiconducting nanowires is vital for practical device applications. Here, the authors use a high-speed printing technique to print semiconducting nanowire arrays onto device substrates with precise nanowire control, and high field-effect mobilities are observed.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>23653185</pmid><doi>10.1038/ncomms2785</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | 639/301/119/995 639/624/1107/1109 639/925/357/1016 Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary) |
| title | Large-scale organic nanowire lithography and electronics |
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