Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal annealing conditions were found and produced a fast photoconductor with high resistivity (up to 2500 Omega cm) and Hall mobil...

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Veröffentlicht in:Optical materials express 2011-11, Vol.1 (7), p.1165-1177
Hauptverfasser: Fekecs, André, Bernier, Maxime, Morris, Denis, Chicoine, Martin, Schiettekatte, François, Charette, Paul, Arès, Richard
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container_issue 7
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container_title Optical materials express
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creator Fekecs, André
Bernier, Maxime
Morris, Denis
Chicoine, Martin
Schiettekatte, François
Charette, Paul
Arès, Richard
description A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal annealing conditions were found and produced a fast photoconductor with high resistivity (up to 2500 Omega cm) and Hall mobility around 400 cm super(2)V super(-1)s super(-1). Short photocarrier trapping times (0.3 ps - 3 ps) were observed via transient differential reflectivity measurements. Furthermore, photoconductive terahertz devices with coplanar electrodes were fabricated and validated. Under pulsed excitation with a 1550 nm femtosecond fiber laser source, antennas based on Fe-implanted InGaAsP are able to emit broadband radiation exceeding 2 THz. Given such specifications, this new material qualifies as a worthy candidate for an integration into optical terahertz spectrometer designs.
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title Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices
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