Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application
► O-doped Sb4Te phase-change films were reported. ► The amorphous-to-crystalline transitions of O-doped Sb4Te films were studied. ► By doping oxygen, the stability of Sb4Te films is improved greatly. ► The resistance of the Sb4Te films increases by doping oxygen. The amorphous-to-crystalline transit...
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| Veröffentlicht in: | Journal of alloys and compounds 2013-02, Vol.551, p.551-555 |
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| container_title | Journal of alloys and compounds |
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| creator | Hu, Yifeng Sun, Mingcheng Song, Sannian Song, Zhitang Zhai, Jiwei |
| description | ► O-doped Sb4Te phase-change films were reported. ► The amorphous-to-crystalline transitions of O-doped Sb4Te films were studied. ► By doping oxygen, the stability of Sb4Te films is improved greatly. ► The resistance of the Sb4Te films increases by doping oxygen.
The amorphous-to-crystalline transitions of oxygen-doped Sb4Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb4Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29°C of undoped Sb4Te film to 102°C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge2Sb2Te5 film. |
| doi_str_mv | 10.1016/j.jallcom.2012.11.032 |
| format | Article |
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The amorphous-to-crystalline transitions of oxygen-doped Sb4Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb4Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29°C of undoped Sb4Te film to 102°C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge2Sb2Te5 film.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2012.11.032</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Alloys ; Applied sciences ; Crystal structure ; Data retention ; Devices ; Diffraction ; Doping ; Electronics ; Exact sciences and technology ; Low-power ; Materials ; Oxygen doping ; Phase change ; Phase-change memory ; Sb4Te ; X-ray photoelectron spectroscopy ; X-rays</subject><ispartof>Journal of alloys and compounds, 2013-02, Vol.551, p.551-555</ispartof><rights>2012</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-bb6a3efe9585ad675fb835296e9163de3c2d981edf6380e9e213cab951b9740d3</citedby><cites>FETCH-LOGICAL-c372t-bb6a3efe9585ad675fb835296e9163de3c2d981edf6380e9e213cab951b9740d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925838812020051$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27113425$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hu, Yifeng</creatorcontrib><creatorcontrib>Sun, Mingcheng</creatorcontrib><creatorcontrib>Song, Sannian</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Zhai, Jiwei</creatorcontrib><title>Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application</title><title>Journal of alloys and compounds</title><description>► O-doped Sb4Te phase-change films were reported. ► The amorphous-to-crystalline transitions of O-doped Sb4Te films were studied. ► By doping oxygen, the stability of Sb4Te films is improved greatly. ► The resistance of the Sb4Te films increases by doping oxygen.
The amorphous-to-crystalline transitions of oxygen-doped Sb4Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb4Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29°C of undoped Sb4Te film to 102°C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge2Sb2Te5 film.</description><subject>Alloys</subject><subject>Applied sciences</subject><subject>Crystal structure</subject><subject>Data retention</subject><subject>Devices</subject><subject>Diffraction</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Low-power</subject><subject>Materials</subject><subject>Oxygen doping</subject><subject>Phase change</subject><subject>Phase-change memory</subject><subject>Sb4Te</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE1r3DAQhkVpodu0P6GgS6EXOxrJXzqFEvoRWMih6VmMpfGuFtlyJG_T_Pt62SXXnOYwz_sO8zD2GUQJAprrQ3nAEGwcSylAlgClUPIN20DXqqJqGv2WbYSWddGprnvPPuR8EEKAVrBh9v7f846mwsWZHP_dVw_E5z1m4naP04744MOY-RAT3_vdvlhonCnhckzEHS7IEy00LT5OHCfHQ3wq5vhEieM8B2_xtPnI3g0YMn26zCv258f3h9tfxfb-593tt21hVSuXou8bVDSQrrsaXdPWQ9-pWuqGNDTKkbLS6Q7IDY3qBGmSoCz2uoZet5Vw6op9PffOKT4eKS9m9NlSCDhRPGYDqtJVC1CJFa3PqE0x50SDmZMfMT0bEOYk1RzMRao5STUAZpW65r5cTmC2GIaEk_X5JSzXdlXJeuVuzhyt__71lEy2niZLzieyi3HRv3LpPw3rkM8</recordid><startdate>20130225</startdate><enddate>20130225</enddate><creator>Hu, Yifeng</creator><creator>Sun, Mingcheng</creator><creator>Song, Sannian</creator><creator>Song, Zhitang</creator><creator>Zhai, Jiwei</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20130225</creationdate><title>Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application</title><author>Hu, Yifeng ; Sun, Mingcheng ; Song, Sannian ; Song, Zhitang ; Zhai, Jiwei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-bb6a3efe9585ad675fb835296e9163de3c2d981edf6380e9e213cab951b9740d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Alloys</topic><topic>Applied sciences</topic><topic>Crystal structure</topic><topic>Data retention</topic><topic>Devices</topic><topic>Diffraction</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Low-power</topic><topic>Materials</topic><topic>Oxygen doping</topic><topic>Phase change</topic><topic>Phase-change memory</topic><topic>Sb4Te</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Yifeng</creatorcontrib><creatorcontrib>Sun, Mingcheng</creatorcontrib><creatorcontrib>Song, Sannian</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Zhai, Jiwei</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Yifeng</au><au>Sun, Mingcheng</au><au>Song, Sannian</au><au>Song, Zhitang</au><au>Zhai, Jiwei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2013-02-25</date><risdate>2013</risdate><volume>551</volume><spage>551</spage><epage>555</epage><pages>551-555</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>► O-doped Sb4Te phase-change films were reported. ► The amorphous-to-crystalline transitions of O-doped Sb4Te films were studied. ► By doping oxygen, the stability of Sb4Te films is improved greatly. ► The resistance of the Sb4Te films increases by doping oxygen.
The amorphous-to-crystalline transitions of oxygen-doped Sb4Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb4Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29°C of undoped Sb4Te film to 102°C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge2Sb2Te5 film.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2012.11.032</doi><tpages>5</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Alloys Applied sciences Crystal structure Data retention Devices Diffraction Doping Electronics Exact sciences and technology Low-power Materials Oxygen doping Phase change Phase-change memory Sb4Te X-ray photoelectron spectroscopy X-rays |
| title | Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application |
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